Allicdata Part #: | FJNS3209RBU-ND |
Manufacturer Part#: |
FJNS3209RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3209RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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:The FJNS3209RBU is a single, pre-biased, bipolar transistor (BJT). This transistor is made from a combination of silicon, germanium, and an insulator. It is an effective choice for low voltage applications, due to its small size, minimal power consumption, and high current rating. The FJNS3209RBU has a wide range of uses and its working principle is relatively simple.
Application Field
The FJNS3209RBU is most commonly used in low voltage applications. It has a current rating of 4.5 amps and a voltage rating of 50 volts. This allows it to be used in a variety of small electronics such as radios and other low-power devices. Additionally, it can also be used in circuits requiring high frequency oscillations, such as transceivers, as well as in high-and low-side switches, linear regulators, and current limiter circuits.
Working Principle
The FJNS3209RBU transistor is a three-terminal device. The three terminals are the base, collector, and emitter. The base terminal is a semiconductor layer, the collector is a metal contact, and the emitter is a semiconductor layer as well. When voltage is applied across the base-emitter junction, it creates a current that flows from the collector to the emitter. This current is related to the base current. Simply, the FJNS3209RBU produces amplification by controlling the gain between the base-collector and base-emitter junctions. This amplification allows for various types of switching (ON/OFF) and current regulation.
The FJNS3209RBU is pre-biased which means the collector is already connected and is at a certain voltage. By providing an input signal to the base terminal, the transistor is able to control and influence the current flow between the collector to the emitter. This allows it to control the output voltage, which is then used to control various types of circuits. This process is based on the transistor’s working principle where the base current is increased and decreased, controlling the gain that is provided to the collector terminal.
The FJNS3209RBU single, pre-biased, bipolar transistor is an effective choice for low voltage applications. It is commonly used in radios, transceivers, and low-power devices, and can also be used in a variety of current limiting and switching solutions. The transistor is relatively easy to use and understand, and is an effective way to control the current output of a circuit.
The specific data is subject to PDF, and the above content is for reference
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