Allicdata Part #: | FJNS4213RTA-ND |
Manufacturer Part#: |
FJNS4213RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJNS4213RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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A Field-junction N-channel Silicon (FJNS4213RTA) is a type of transistor, specifically an N-channel Field-Effect Transistor (FET). It is designed for specific applications in various electronic circuits and has a wide range of applications. This article will provide an overview of the applications and working principle of the FJNS4213RTA.
The FJNS4213RTA is a single-channel, pre-biased, low power, N-channel JFET. Due to its low power consumption and pre-bias characteristics, the FJNS4213RTA is widely used in the manufacture of radio frequency applications, high current amplifiers, and field-effect transistor amplifiers. It is also commonly used in audio preamps, power supplies, and digital comparators.
The FJNS4213RTA is also used in logic gates due to its wide range of applications. For example, it is used in the circuit of a flip-flop in order to store a binary value. Additionally, the FJNS4213RTA can be used as a switching device in a voltage regulator or as a differential amplifier.
The working principle of the FJNS4213RTA is based on a surface-defined, field-effect transistor with a PN junction that controls the potential at the drain between a gate and drain terminal. When the gate is activated, a depletion layer is formed between the source and drain terminals, allowing current to flow from the drain to the source. The gate bias is established by supplying voltage to the gate terminal, which generates a DC gate voltage. A gate bias can also be obtained from other resistive sources such as bias network resistors.
The FJNS4213RTA can be operated in either depletion or enhancement modes. In depletion mode, the drain current is inhibited when a negative gate bias is applied, whereas in enhancement mode, the drain current is increased when a positive gate bias is applied. Depending on the circuit design and the device being used, the drain current of the FJNS4213RTA can be adjusted by varying the gate bias.
In summary, the FJNS4213RTA is a single-channel, pre-biased, low power, N-channel Field-Effect Transistor (FET) that is suitable for use in a wide range of applications. It is primarily used in radio frequency applications, power supplies, and digital comparators, but is also used as a switching device in voltage regulators or as a differential amplifier in logic gates. The FJNS4213RTA operates on a surface-defined, field-effect transistor with a PN junction between the gate and drain terminal. It can be operated in either depletion or enhancement mode, depending on the circuit design and the device being used.
The specific data is subject to PDF, and the above content is for reference
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