Allicdata Part #: | FJNS3213RBU-ND |
Manufacturer Part#: |
FJNS3213RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3213RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FJNS3213RBU transistors are a type of single, pre-biased bipolar junction transistors (BJTs). Transistors are electrical components that allow current to be switched on and off, enabling electronic circuits to control the power supply for devices and systems. Unlike many other transistors, the FJNS3213RBU comes pre-biased, meaning that resistors are not needed to establish a specific base current prior to operation. Pre-biased transistors also switch faster than regular BJTs due to their high gain.
FJNS3213RBU transistors consist of three terminals, base, collector, and emitter. The base is the control terminal and is the one used to switch the transistor on and off. The collector is the power supply source and the emitter is where the current passes through. This is a “NPN” type of transistor, which is used to produce an “on” or “off” signal. When the base is high, the transistor is “on”, and when it is low, the transistor is “off”.
The FJNS3213RBU is a symmetric enhancement mode transistor, meaning the current flow between the collector and the emitter can be controlled by the base. This transistor is designed to provide high current gain at low voltages. It features low saturation voltage due to its high collector current and low capacitance. This has a wide range of applications including digital circuitry and switching devices.
FJNS3213RBU transistors are used for a variety of signal processing applications. They find use in mobiles, computers and many other devices including linear and switching power supplies, voltage regulators, power amplifiers, and PWM converters. FJNS3213RBU transistors also find use in data acquisition systems, noise reduction circuits, power supply damping and surge protection systems. They are widely used in industrial, medical, and aerospace applications.
Due to the low saturation voltage and high current gain of the FJNS3213RBU transistor, it is ideal for switching, amplification, and circuit protection applications. This type of transistor is a perfect choice when low noise and fast switching speeds are desired. It is also able to handle current up to 10A and withstand high surge currents.
FJNS3213RBU transistors are highly efficient and reliable components, featuring a low power consumption as well as exceptional switching speed. The performance of this type of transistor has been proven and tested in many applications, making it a trusted and cost-effective choice.
The specific data is subject to PDF, and the above content is for reference
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