Allicdata Part #: | FJNS3205RBU-ND |
Manufacturer Part#: |
FJNS3205RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3205RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJNS3205RBU is a single bipolar transistor that can be used for a wide range of applications. This type of transistor has several distinct advantages, including its enhanced current gain, improved reliability and higher speeds. It is ideal for many applications, including power management, signal switching, low noise amplifiers, high frequency applications and low-power applications.
The FJNS3205RBU has a pre-biased configuration that allows it to operate more efficiently than standard transistors. The pre-biased configuration eliminates the need for external biasing resistors, allowing it to operate with less power consumption. The pre-biased configuration also reduces the collectors’ noise, allowing higher frequencies to be handled with no degradation of the signal quality.
The FJNS3205RBU is also optimized for high speed applications, reaching up to 3400 Mbps data rate and high-frequency switching up to 250 kHz. Its low-voltage operation also makes it suitable for battery-powered applications. Moreover, its temperature compensation feature ensures greater stability at higher temperatures.
The working principle of FJNS3205RBU can be explained as follows: It is a four-layer device or large signal transistor. The four layers consist of anemic base, collector, anode, and anode material. The first layer of the transistor acts as the collector while the subsequent layer acts as the anode. This forms a MOSFET-like structure, with the rechargeable ions serving as charge carriers. When the base voltage is applied, the electrons are drawn to the collector and form a negative charge, which causes current to flow through the anode when the transistor is forward biased.
When the voltage is applied to the base, it generates a depletion region around the collector-base junction, reducing the available current through the collector. This decrease in the current causes the base-emitter voltage to increase, generating sufficient charge to raise the voltage of the collector-base junction to the desired level, allowing current to flow freely. This allows current to flow freely in either the forward or reverse direction, allowing the transistor to be used for amplifying and switching operations.
The FJNS3205RBU is extremely useful in many applications that require high-frequency switching, low noise, and low-power operation. Its enhanced current gain and temperature compensation features allow it to operate reliably over a wide range of temperatures. Its pre-biased configuration also eliminates the need for external biasing resistors and allows it to operate with less power consumption. With its many advantageous features, the FJNS3205RBU is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FJNS7565BU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 10V 5A TO-92MIN... |
FJNS7565TA | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 10V 5A TO-92MIN... |
FJNS3208RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3206RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3211RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3215RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3202RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3215RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3210RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3212RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3209RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3204RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3205RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3201RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3213RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3201RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3202RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3204RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3214RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3203RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3211RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3209RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3203RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3214RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3207RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3212RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3210RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3208RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3207RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3206RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3213RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS3205RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJNS4214RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4214RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4212RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4210RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4205RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4205RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4201RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJNS4211RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...