FJNS3205RBU Allicdata Electronics
Allicdata Part #:

FJNS3205RBU-ND

Manufacturer Part#:

FJNS3205RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJNS3205RBU datasheetFJNS3205RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FJNS3205RBU is a single bipolar transistor that can be used for a wide range of applications. This type of transistor has several distinct advantages, including its enhanced current gain, improved reliability and higher speeds. It is ideal for many applications, including power management, signal switching, low noise amplifiers, high frequency applications and low-power applications.

The FJNS3205RBU has a pre-biased configuration that allows it to operate more efficiently than standard transistors. The pre-biased configuration eliminates the need for external biasing resistors, allowing it to operate with less power consumption. The pre-biased configuration also reduces the collectors’ noise, allowing higher frequencies to be handled with no degradation of the signal quality.

The FJNS3205RBU is also optimized for high speed applications, reaching up to 3400 Mbps data rate and high-frequency switching up to 250 kHz. Its low-voltage operation also makes it suitable for battery-powered applications. Moreover, its temperature compensation feature ensures greater stability at higher temperatures.

The working principle of FJNS3205RBU can be explained as follows: It is a four-layer device or large signal transistor. The four layers consist of anemic base, collector, anode, and anode material. The first layer of the transistor acts as the collector while the subsequent layer acts as the anode. This forms a MOSFET-like structure, with the rechargeable ions serving as charge carriers. When the base voltage is applied, the electrons are drawn to the collector and form a negative charge, which causes current to flow through the anode when the transistor is forward biased.

When the voltage is applied to the base, it generates a depletion region around the collector-base junction, reducing the available current through the collector. This decrease in the current causes the base-emitter voltage to increase, generating sufficient charge to raise the voltage of the collector-base junction to the desired level, allowing current to flow freely. This allows current to flow freely in either the forward or reverse direction, allowing the transistor to be used for amplifying and switching operations.

The FJNS3205RBU is extremely useful in many applications that require high-frequency switching, low noise, and low-power operation. Its enhanced current gain and temperature compensation features allow it to operate reliably over a wide range of temperatures. Its pre-biased configuration also eliminates the need for external biasing resistors and allows it to operate with less power consumption. With its many advantageous features, the FJNS3205RBU is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FJNS" Included word is 40
Part Number Manufacturer Price Quantity Description
FJNS7565BU ON Semicondu... 0.0 $ 1000 TRANS NPN 10V 5A TO-92MIN...
FJNS7565TA ON Semicondu... 0.0 $ 1000 TRANS NPN 10V 5A TO-92MIN...
FJNS3208RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3206RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3211RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3215RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3202RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3215RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3210RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3212RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3209RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3204RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3205RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3201RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3213RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3201RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3202RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3204RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3214RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3203RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3211RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3209RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3203RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3214RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3207RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3212RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3210RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3208RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3207RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3206RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3213RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS3205RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 300MW T...
FJNS4214RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4214RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4212RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4210RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4205RBU ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4205RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4201RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
FJNS4211RTA ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 300MW T...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics