Allicdata Part #: | FJNS3207RBU-ND |
Manufacturer Part#: |
FJNS3207RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3207RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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FJNS3207RBU Application Field and Working Principle
FJNS3207RBU is a type of single, pre-biased bipolar junction transistor (BJT). As a pre-biased transistor, FJNS3207RBU has an integrated biasing system that allows the device to function without an external bias circuit. As a single BJT, FJNS3207RBU consists of two transistor terminals (collector and emitter) between which the current flows when a voltage is applied to the base terminal.
In applications, FJNS3207RBU is mainly used to drive power MOSFETs, providing higher current than other single BJTs. Additionally, FJNS3207RBU is often used in driver stages of MOSFETs and SCRs and as an active switch element in flip-flops and other digital circuits. Furthermore, FJNS3207RBU can be used in analog and mixed-signal applications, and can also be used in Class-D audio amplifiers.
The working principle of FJNS3207RBU is based on the properties of a BJT. A BJT is a type of transistor that uses the movement of charge carriers (electrons or holes) to control the current flowing between the collector and emitter terminals. When a voltage is applied to the base terminal of a BJT, it causes the movement of electrons from the base to the collector, creating an electric current between the collector and the emitter. As the majority of the electrons are concentrated near the collector, a strong electric field is created that supports further movement of electrons. This electric field is referred to as the “base-collector junction”, and it is the mechanism by which a BJT is able to control the current between the collector and emitter.
When used as an active switch element in digital circuits, FJNS3207RBU can switch on and off quickly, allowing for fast and efficient digital operations. Furthermore, due to its pre-biased nature, FJNS3207RBU requires no external bias circuit, making it ideal for applications where cost and power consumption must be kept to a minimum.
In summary, FJNS3207RBU is a single, pre-biased bipolar junction transistor (BJT) that is mainly used to drive power MOSFETs. It can also be used in Class-D audio amplifiers, driver stages of MOSFETs and SCRs, and as an active switch element in digital circuits. The working principle of FJNS3207RBU is based on the properties of a BJT, wherein the movement of electrons from the base to the collector creates an electric current between the collector and the emitter.
The specific data is subject to PDF, and the above content is for reference
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