FJNS3215RTA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	300mW
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Short Body
Supplier Device Package:	TO-92S

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Introduction:

FJNS3215RTA is a single Pre-Biased Bipolar Junction Transistor (BJT). This type of transistor is a physically small device that can be used to amplify or switch electrical signals or currents. It has a number of practical applications in electronics and microelectronics. This article will discuss the application field and working principle of the FJNS3215RTA.

Application Field:

One of the primary applications of the FJNS3215RTA is switching. This type of transistor is able to quickly switch on and off high voltages with low current. It is often used in power switching applications such as solid state relays (SSRs).The FJNS3215RTA is also used for amplifying low voltage signals. This makes it ideal for applications such as audio amplifiers, RF amplifiers, and instrumentation amplifiers. It is also used for controlling high power motors and solenoids.The FJNS3215RTA is also used for level shifting. With a supply voltage that is higher than the load it is controlling, it is able to reduce the voltage from the input, without changing the current level. This makes the FJNS3215RTA ideal for switching or controlling devices with different voltage levels.

Working Principle:

The FJNS3215RTA is a single pre-biased BJT. This means that the emitter-base junction of the BJT is already reverse biased before power is applied to the transistor. This drastically reduce the time needed to achieve full conduction and also makes switching much faster.When an input voltage is applied to the base and collector of the transistor, current is allowed to flow through the transistor due to the presence of the pre-biased junction. The ratio of current flowing from the collector to the base is called the current gain and is denoted by the letter hFE. The hFE of the FJNS3215RTA is typically between 50 and 300, depending on the exact type selected.The collector current (I) is controlled by the base current (IB). This relationship is expressed in the following equation:I = hFE * IBThe amount of current flowing through the transistor is limited by the maximum collector current of the FJNS3215RTA. This maximum collector current is typically between 250mA and 500mA.

Conclusion:

The FJNS3215RTA is a single pre-biased BJT that is commonly used for switching, amplifying, and level shifting. It can switch high voltages with low current and has a current gain of between 50 and 300. The maximum collector current of the FJNS3215RTA is typically between 250mA and 500mA. Due to its small size and high performance, the FJNS3215RTA is an ideal choice for many applications in electronics and microelectronics.

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