Allicdata Part #: | FJNS3204RTA-ND |
Manufacturer Part#: |
FJNS3204RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3204RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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The FJNS3204RTA is a single, pre-biased, bipolar junction transistor (BJT) specifically designed for use in power management applications. This device is suitable for use as a power amplifier in AC/DC, DC/DC, and pulsed current supplies. It is also used as a switch in a wide variety of power supplies, drivers, and industrial applications. It can also be used as a breakdown protection device.
This transistor has a voltage rating of 20V, a continuous current rating of 1A, and can handle peak current loads of up to 5A. It has a low on-resistance of 0.195Ω and a fast switching time of 15ns. The FJNS3204RTA is a monolithic package in a TO-220 package.
The FJNS3204RTA uses a single-stage common-emitter circuit to amplify a voltage or current input from the base. It is designed to be used with a voltage divider in the base circuit in order to provide a fixed current redistribution across two outputs. This BJT is especially useful for obtaining high-current gains at low input voltages.
The transistor is pre-biased to lower the voltage across a load and thereby improving the overall efficiency of the device. This pre-biased feature helps reduce the power dissipation of the device and allows it to be used in applications such as pulse-width modulation (PWM) controlled drives. In addition, the pre-biased feature allows for more accurate control over the base-emitter voltage (VBE) in order to maximize power output.
The FJNS3204RTA is capable of providing excellent voltage and current gains, thanks to its high breakdown voltage, low on-resistance, and fast switching time. It is also commonly used for obtaining high frequency response and for helping reduce electromagnetic interference (EMI).
Overall, the FJNS3204RTA is an excellent choice for power management applications, thanks to its ability to provide high current gains at low input voltages and its fast switching times. Its pre-biased feature also helps reduce power dissipation and allows for more accurate control of the VBE. By taking advantage of its high breakdown voltage, low on-resistance, and fast switching time, the FJNS3204RTA will help ensure efficient operation in a wide range of power management applications.
The specific data is subject to PDF, and the above content is for reference
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