Allicdata Part #: | FJNS4203RBU-ND |
Manufacturer Part#: |
FJNS4203RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJNS4203RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJNS4203RBU is a single pre-biased general-purpose bipolar NPN transistor. This device is a semiconductor that helps with the amplification and switching of signals, making it ideal for use in a wide range of applications.
The FJNS4203RBU is designed to offer superior performance and added functionality over traditional bipolar NPN transistors, allowing for increased functionality and reliability in many applications. This device is capable of delivering up to 40V Collector-Base voltage, a Collector-Emitter voltage of 30V and a maximum power dissipation of 0.6W.
In terms of applications, the FJNS4203RBU can be used in a variety of areas. These include Amplifier, Buffers, RF/IF, High Voltage, Low Voltage, and Logic switching applications. Thanks to its superior performance, this device can also be used in more demanding applications such as radio-frequency (RF) modules, analog and digital circuit design, power amplifiers, and more.
To understand how this device works, it is important to have an understanding of its basic principles. In general, NPN transistors are three-terminal devices that allow current to flow from the Collector to the Emitter port, when a small current from the Base port is applied. If a larger current is applied to the Base port, then the Collector-Emitter current increases. In other words, the transistor amplifies the current from the Base port.
The FJNS4203RBU is a pre-biased NPN transistor, meaning it is designed to act as an amplifier, buffer, or switch when it is already biased to an offset voltage or current. This can provide improved performance, stability and increased functionality. The base of this transistor is connected to a circuit, which has been pre-biased to the required voltage or current.
The FJNS4203RBU is an ideal solution for many applications due to its superior performance, added functionality, and pre-biased design. This device is a great choice for Amplifier, Buffers, RF/IF, High Voltage, Low Voltage, and Logic switching applications. Thanks to the FJNS4203RBU’s excellent efficiency, it can also be used in more demanding applications such as radio-frequency (RF) modules, analog and digital circuit design, power amplifiers, and more. With its superior performance and pre-biased design, the FJNS4203RBU is perfect for any application.
The specific data is subject to PDF, and the above content is for reference
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