FJNS4203RBU Allicdata Electronics
Allicdata Part #:

FJNS4203RBU-ND

Manufacturer Part#:

FJNS4203RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJNS4203RBU datasheetFJNS4203RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FJNS4203RBU is a single pre-biased general-purpose bipolar NPN transistor. This device is a semiconductor that helps with the amplification and switching of signals, making it ideal for use in a wide range of applications.

The FJNS4203RBU is designed to offer superior performance and added functionality over traditional bipolar NPN transistors, allowing for increased functionality and reliability in many applications. This device is capable of delivering up to 40V Collector-Base voltage, a Collector-Emitter voltage of 30V and a maximum power dissipation of 0.6W.

In terms of applications, the FJNS4203RBU can be used in a variety of areas. These include Amplifier, Buffers, RF/IF, High Voltage, Low Voltage, and Logic switching applications. Thanks to its superior performance, this device can also be used in more demanding applications such as radio-frequency (RF) modules, analog and digital circuit design, power amplifiers, and more.

To understand how this device works, it is important to have an understanding of its basic principles. In general, NPN transistors are three-terminal devices that allow current to flow from the Collector to the Emitter port, when a small current from the Base port is applied. If a larger current is applied to the Base port, then the Collector-Emitter current increases. In other words, the transistor amplifies the current from the Base port.

The FJNS4203RBU is a pre-biased NPN transistor, meaning it is designed to act as an amplifier, buffer, or switch when it is already biased to an offset voltage or current. This can provide improved performance, stability and increased functionality. The base of this transistor is connected to a circuit, which has been pre-biased to the required voltage or current.

The FJNS4203RBU is an ideal solution for many applications due to its superior performance, added functionality, and pre-biased design. This device is a great choice for Amplifier, Buffers, RF/IF, High Voltage, Low Voltage, and Logic switching applications. Thanks to the FJNS4203RBU’s excellent efficiency, it can also be used in more demanding applications such as radio-frequency (RF) modules, analog and digital circuit design, power amplifiers, and more. With its superior performance and pre-biased design, the FJNS4203RBU is perfect for any application.

The specific data is subject to PDF, and the above content is for reference

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