Allicdata Part #: | FJNS3201RBU-ND |
Manufacturer Part#: |
FJNS3201RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3201RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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FJNS3201RBU is a bipolar junction transistor (BJT) composed of three terminals of collector, base and emitter. The single pre-biased type gains advantages in its costs and makes it a desirable choice in signal amplification and switching applications. It is suitable for hobbyists and commercial users. In this article, we will discuss the application field and working principle of the FJNS3201RBU.
Application Field
The FJNS3201RBU is suitable for many applications, specially in rapid switching waveforms and signal amplification. With the pre-biased feature, it offers a low cost structure and robust performance. As the junction resistance increases, it is suitable for applications that require low noise operational level. It can also be used to construct Schmitt trigger circuits. Another common use of FJNS3201RBU is as power switches for controlling power, as this type of transistors tend to consume less power than other BJT types.
Working Principle
BJT amplifiers consist of three elements, namely the Base, Collector and Emitter. The FJNS3201RBU operates on the principle of junction diode and current flow control, which means a small current flowing through the base-emitter junction controls a larger flow of current from the collector to the emitter. This transistor also has an inherent pre-biased feature, meaning that the state of the transistor is already predefined. The base and emitter will be in an “on” state, and the base and collector are “off”. When a sufficient voltage is applied to the base of the transistor, the emitter receives current and the collector receives current as well, thus, amplifying the signal.
In summary, the FJNS3201RBU is an ideal choice for signal amplification and switching applications due to its low cost structure, pre-biased feature and robust performance. The working principle of this type of transistor can be easily understood, and it offers a reliable solution for hobbyists and commercial users alike.
The specific data is subject to PDF, and the above content is for reference
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