FJNS4210RBU Allicdata Electronics
Allicdata Part #:

FJNS4210RBU-ND

Manufacturer Part#:

FJNS4210RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJNS4210RBU datasheetFJNS4210RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

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The FJNS4210RBU is a silicon, NPN transistor[1] which belongs to the Single, Pre-Biased collection of transistors – Bipolar (BJT). FJNS4210RBU is designed for applications that require high-voltage or high-current operation. It is specifically designed for applications such as switching and amplifier circuits. This type of transistor is known for its superior performance in high-voltage and high-current applications, making it the ideal choice for those kinds of applications.

The operating range of the FJNS4210RBU is from −55°C to +125°C. It has a maximum current gain of 30 and a minimum current gain of 10. It also features a low power dissipation of 0.5W. This makes it ideal for portable applications, as it is suited to handle low-power inputs and requires much less power than other transistors. Additionally, its high forward current rating of 20A and high collector-base voltage rating of 800V make it a superb choice for applications that require high-voltage or high-current operation.

The FJNS4210RBU is an NPN transistor, meaning that it is made up of three layers of semiconductor material. The first layer is called the emitter and it is the layer which gives off electrons. The second layer is called the base and it is the layer which allows the electrons from the emitter to flow through and into the collector. The collector is the third layer and is the layer which collects the electrons from the base and prevents them from flowing back into the emitter. This is the complete structure of an NPN transistor.

The working principle of the FJNS4210RBU is similar to that of other transistors, in that it is used to control the flow of current. When a negative voltage is applied, the electrons from the emitter are attracted to the base, resulting in a current flowing from the emitter to the collector. This current can then be used to control the flow of higher voltages and currents. This transistors is also used in circuits where it can be used as an amplifier, allowing higher current and voltage signals to be amplified.

In summary, the FJNS4210RBU transistor is an important component in a wide range of applications including switching and amplifier circuits. It is a robust and reliable component that can handle varying temperatures and offer superior performance in high-voltage and high-current applications. Additionally, its low power dissipation makes it ideal for portable applications. The working principle of the FJNS4210RBU is similar to that of other transistors, in that it is used to help control the flow of current.

The specific data is subject to PDF, and the above content is for reference

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