Allicdata Part #: | FJNS4210RBU-ND |
Manufacturer Part#: |
FJNS4210RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJNS4210RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJNS4210RBU is a silicon, NPN transistor[1] which belongs to the Single, Pre-Biased collection of transistors – Bipolar (BJT). FJNS4210RBU is designed for applications that require high-voltage or high-current operation. It is specifically designed for applications such as switching and amplifier circuits. This type of transistor is known for its superior performance in high-voltage and high-current applications, making it the ideal choice for those kinds of applications.
The operating range of the FJNS4210RBU is from −55°C to +125°C. It has a maximum current gain of 30 and a minimum current gain of 10. It also features a low power dissipation of 0.5W. This makes it ideal for portable applications, as it is suited to handle low-power inputs and requires much less power than other transistors. Additionally, its high forward current rating of 20A and high collector-base voltage rating of 800V make it a superb choice for applications that require high-voltage or high-current operation.
The FJNS4210RBU is an NPN transistor, meaning that it is made up of three layers of semiconductor material. The first layer is called the emitter and it is the layer which gives off electrons. The second layer is called the base and it is the layer which allows the electrons from the emitter to flow through and into the collector. The collector is the third layer and is the layer which collects the electrons from the base and prevents them from flowing back into the emitter. This is the complete structure of an NPN transistor.
The working principle of the FJNS4210RBU is similar to that of other transistors, in that it is used to control the flow of current. When a negative voltage is applied, the electrons from the emitter are attracted to the base, resulting in a current flowing from the emitter to the collector. This current can then be used to control the flow of higher voltages and currents. This transistors is also used in circuits where it can be used as an amplifier, allowing higher current and voltage signals to be amplified.
In summary, the FJNS4210RBU transistor is an important component in a wide range of applications including switching and amplifier circuits. It is a robust and reliable component that can handle varying temperatures and offer superior performance in high-voltage and high-current applications. Additionally, its low power dissipation makes it ideal for portable applications. The working principle of the FJNS4210RBU is similar to that of other transistors, in that it is used to help control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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