Allicdata Part #: | FJNS3208RTA-ND |
Manufacturer Part#: |
FJNS3208RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3208RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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The FJNS3208RTA is a single pre-biased bipolar junction transistor (BJT), widely used in a wide range of applications. It has a versatile range of uses, from low-power heater and light dimmer control applications to multi-megawatt PA modules and RF power amplifiers.
At the most basic level, BJT transistors are two-terminal electronic switches. By controlling the amount of current flowing between the two active terminals, the BJT can be used to switch electrical and electronic signals and to boost the power of a signal.
The FJNS3208RTA consists of three semiconductor layers called the base, collector and emitter. The current flow in the device can be approximated as a linear function of the voltage acting on the base and collector terminals. With a typical gain of 1,000, the FJNS3208RTA can be used to control larger currents with a small change in base current.
The FJNS3208RTA is designed for operating in high power modes and is a popular choice for applications such as motor control, lighting and high power RF amplifiers. It has a maximum Collector-to-Emitter voltage (VCE) of 1200V, making it suitable for applications operating at high voltage. The FJNS3208RTA also features a low Collector-to-Emitter leakage current (Ic) of 1mA, making it suitable for applications with low power consumption.
The FJNS3208RTA’s large Collector-to-Base capacitance (Ccb) makes it suitable for switching off and on in a short time. The very short storage time, a parameter that describes the mean time that a transistor requires to switch from the off state to the on state and vice versa, also makes the FJNS3208RTA suitable for applications with very fast changes in current. This device can also handle high power densities and large signal swings, making it optimal for power amplifier and switching applications.
The FJNS3208RTA is also an excellent choice for applications that require high current switching. Due to its high-current gain, it can be used to switch larger currents with lower base currents. This makes the FJNS3208RTA suitable for applications such as switching LEDs, creating variable-voltage power supplies, and controlling the speed of motors.
The FJNS3208RTA offers an excellent balance of parameters, making it an ideal choice for a wide range of applications. With its high voltage, high gain, low leakage current, and high current handling capabilities, the FJNS3208RTA is an excellent choice for any high power application.
The specific data is subject to PDF, and the above content is for reference
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