FJNS4203RTA Allicdata Electronics
Allicdata Part #:

FJNS4203RTA-ND

Manufacturer Part#:

FJNS4203RTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJNS4203RTA datasheetFJNS4203RTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

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The FJNS4203RTA is a single, pre-biased bipolar junction transistor (BJT). This type of transistor is used to amplify, switch, and control power in a variety of applications. In this article, we will discuss the application fields and working principles of the FJNS4203RTA.

Application Field

The FJNS4203RTA is employed in many different power electronics applications. Commonly, it is used in energy storage and power management applications, such as battery charger, peak current and load dump protection circuits. It is also used in switch mode power supplies, DC-DC converters, motor control systems, and many others. Due to its versatility, the FJNS4203RTA is also commonly used in automotive and military applications.

Working Principle

The FJNS4203RTA is composed of a single N-type base layer and P-type emitter and collector layers. A bias voltage is applied to the base layer to create an electric field between the emitter and collector layers. When a current flows into the base layer, it in turn creates a current between the emitter and collector layers. This amplified current is then used to drive the load or control further components.

The FJNS4203RTA is a current-controlled device. This means that it is the current that is applied to the base layer that governs the current flowing through the emitter and collector layers. The ratio between input current and the output current is known as the current gain, and is referred to by the letter “h” (beta). The current gain for the FJNS4203RTA is an impressive 1000.

The FJNS4203RTA also provides switching functionality. In this case, the device is used as an on/off switch, depending on the voltage applied to the base layer. When the voltage is too low, the switch is “off”, and when the voltage is high enough, the switch turns “on”.

In addition to the current control and switching capabilities, the FJNS4203RTA also has an on-state resistance (RDS(ON)) of 0.2 ohm. This on-state resistance helps to minimize power loss in applications such as DC to DC converters and motor control systems, where a low on-state resistance is essential.

Conclusion

The FJNS4203RTA is a single, pre-biased bipolar junction transistor that can be used in many different applications. Its current control capabilities, switching capabilities, and low on-state resistance make it an ideal solution for many power electronics applications. With its wide array of application fields, it is a highly versatile device that has many different uses.

The specific data is subject to PDF, and the above content is for reference

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