Allicdata Part #: | FJNS4213RBU-ND |
Manufacturer Part#: |
FJNS4213RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJNS4213RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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The FJNS4213RBU is a single pre-biased bipolar transistor (BJT) manufactured by ON Semiconductor. It is a member of the NPN family of transistors, with a structure of NPN-EBC. The transistor offers a variety of features and capabilities such as a collector-emitter voltage of 62V and a collector-base voltage of 70V, enabling it to be used in a wide range of applications. Its maximum current gain is 15, which makes it ideal for use in a variety of switching and amplification circuits. Additionally, the FJNS4213RBU has a 1A continuous collector current, which extends its capabilities even further.The FJNS4213RBU is primarily used as a high-current switching device in many electronic circuits, primarily for switching or amplifier applications. An example of such a use is in the design of a switching amplifier, where the transistor is able to rapidly switch between low and high voltages, allowing for a high level of amplification. Additionally, the FJNS4213RBU can be used in a range of voltage detector circuits, such as detecting the level of the mains power supply, as well as in various switching circuits.The working principle of the FJNS4213RBU is based on its NPN-EBC structure, which provides the transistor with its switching capabilities. This structure consists of three electrodes, the base (B), collector (C) and emitter (E). When the base is negatively biased with respect to the emitter, the transistor is said to be “off”, allowing no current to flow between the collector and emitter. Conversely, when the base voltage is increased to a level greater than the emitter voltage, the transistor is “on” and current will flow between the collector and emitter. By varying the input current applied to the base, it is possible to control the current flowing between the collector and emitter, thus controlling the amount of voltage that is amplified. As such, the FJNS4213RBU can be used to switch between low and high outputs, or to amplify a small voltage to a larger one. The FJNS4213RBU is a versatile transistor, with a variety of applications and a wide operating range. It is capable of delivering high performance in a range of switching and amplification circuits, making it a highly reliable and cost-effective choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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