Name: FJNS4212RBU
Brand: ON Semiconductor
SKU: FJNS4212RBU-ND
Availability: InStock

Allicdata Part #:	FJNS4212RBU-ND
Manufacturer Part#:	FJNS4212RBU
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	ON Semiconductor
Short Description:	TRANS PREBIAS PNP 300MW TO92S
More Detail:	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet:	FJNS4212RBU Datasheet/PDF
Quantity:	1000

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Specifications

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	40V
Resistor - Base (R1):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	300mW
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Short Body
Supplier Device Package:	TO-92S

Description

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The FJNS4212RBU is an NPN silicon pre-biased transistor manufactured by Fairchild Semiconductor and classified as a member of the transistors - bipolar (BJT) - single category. This transistor is is ideal for small signal switching and amplifier applications due to its small size, high gain, and low noise characteristics.The FJNS4212RBU is a 3-terminal device with a minimum breakdown voltage of 40V and a maximum collector current of 100mA. It features a collector-emitter saturation voltage of Vce(sat) typically 0.3V, and a total power dissipation of 500mW.The FJNS4212RBU has two built-in resistors that bias the transistor into operation, making it suitable for single-supply apps. One of the resistors (R1) applies a small DC current to the base of the device, balancing the junction capacitance and preventing unwanted oscillations. The second resistor (R2) is used to set the operating quiescent current (Iq) of the device. The FJNS4212RBU also has a low on-resistance of typically 1.2Ω, and a wide gain-bandwidth product of typically 11MHz, making it suitable for high-speed applications. It is also capable of taking short-term overloads of up to 500mA, with a fast response time of typically 90ns.The FJNS4212RBU can also be used in applications such as low noise amplifiers, instrumentation amplifiers, comparators, signal buffers, and audio amplifiers. The wide range of capabilities offered by the FJNS4212RBU makes it the ideal choice for many circuit designs.In summary, the FJNS4212RBU is a low-cost, high-performance, pre-biased NPN silicon transistor. It features a low breakdown voltage, high gain, and fast response time, making it suitable for many low-voltage and high-speed applications. Additionally, the two integrated biasing resistors simplify operation, allowing for single-supply operation and reducing design complexity.

The specific data is subject to PDF, and the above content is for reference

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FJNS4212RBU-ND

FJNS4212RBU

Discrete Semiconductor Products