Allicdata Part #: | FJNS3212RTA-ND |
Manufacturer Part#: |
FJNS3212RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3212RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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FJNS3212RTA is a single, pre-biased, bipolar transistor (BJT) capable of a wide range of applications. The device is primarily used in automotive and industrial electrical and electronic devices such as power supplies, motors, relays, temperature sensors, and DC to AC inverters. It is also used in the manufacture of high-end medical, telecommunication, and consumer electronics products.
The FJNS3212RTA is a monolithic bipolar junction transistor (BJT) and consists of a single pn junction with a collector, base, and emitter. It is also capable of accepting large currents and can be operated in both NPN and PNP configurations. The device is capable of carrying the current up to 50 Amps, can withstand voltages up to 500 Volts, and can be switched on and off in less than 1 microsecond. The FJNS3212RTA is also thermally robust, with a power dissipation rating of 150 Watts. Its total power dissipation signal range is 0.003 to 7 Watts.
The FJNS3212RTA has a variety of applications due to its high tolerance against voltage and current, its fast switching time, and its thermal robustness. The device is often used in power supplies, amplifiers, motor control, and DC to AC inverters. Additionally, the device is used to control high current relays and switches in automotive applications.
The working principle of the FJNS3212RTA can be understood by studying the operation of a single pn junction. When a positive current is applied to one side of the junction, a depletion zone is created between the p-type and n-type semiconductor materials. This depletion zone prevents a direct flow of electrons and acts as an insulator. This is known as the "reverse bias" state. When a negative current is applied, the depletion zone is reduced, allowing electrons to flow freely. This is known as the "forward bias" state.
When the FJNS3212RTA is in its forward bias state, it acts as an amplifier, allowing the current to be amplified. This is due to the fact that the voltage drop between the base and the emitter is lower than the voltage drop between the base and the collector. This allows for a larger current to flow through the device. In this way, the FJNS3212RTA can be used to control relatively large currents and voltages.
In summary, the FJNS3212RTA is a single, pre-biased, bipolar transistor capable of a wide range of applications due to its high current tolerance and fast switching times. The device can be used in amplifiers, power supplies, motor control, and DC to AC inverters. Its operation is based on the principle of a single pn junction, with a forward bias allowing electrons to flow freely and a reverse bias creating an insulating depletion zone.
The specific data is subject to PDF, and the above content is for reference
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