Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	95A
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 75A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	4.6nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FP75R06KE3BOSA1 Application Field and Working Principle

Introduction to Transistors

A transistor is a semiconductor device consisting of three layers of a semiconductor material with each layer having a different charge. The layers are often referred to as the base, collector, and emitter. Transistors are used as switches and amplifiers in many electronic systems. They can be used to control current or voltage, depending on the application. Different types of transistors are available for different types of applications, allowing for a wide range of functionality.

IGBTs (Insulated Gate Bipolar Transistors)

IGBTs are a type of transistor developed for power applications, such as motor control and power supplies. They consist of two parts, the main element and a gate insulator. The main element is a combination of bipolar junction transistors (BJTs) and metal-oxide-semiconductor field effect transistors (MOSFETs), while the gate insulator is typically a high-temperature material with insulation properties. The combination of the two components produces an IGBT that is both robust and reliable.

FP75R06KE3BOSA1 Modules

The FP75R06KE3BOSA1 module is an insulated gate bipolar transistor (IGBT) device specifically designed and optimized for motor control applications. It is composed of several IGBT cells connected in parallel and a built-in diode connected in antiparallel with the IGBT. The module is capable of conducting high currents and can operate in a wide temperature range, from –40°C to 150°C.

FP75R06KE3BOSA1 Application Fields

The FP75R06KE3BOSA1 module is used in a wide variety of applications, including motor control, power conversion, and switching. It is particularly well-suited for use in high-power, converters and inverters for industrial applications, such as solar photovoltaic (PV) systems, uninterruptible power supplies (UPS), and electric vehicles. The module has a high switching frequency and can handle high voltage and inductive loads.

Working Principle of the FP75R06KE3BOSA1

The FP75R06KE3BOSA1 module works by switching the IGBT on and off. When the transistor is off, no current flows in the load and the voltage at the collector is equal to the voltage at the emitter. When the transistor is on, current flows through the load and the voltage at the collector is lower than the voltage at the emitter.The switching speed of the IGBT is determined by the gate voltage. When the gate voltage is low, the IGBT remains closed and no current flows in the load. When the gate voltage increases, the IGBT switches to an open state and current flows through the load. Similarly, when the gate voltage decreases, the IGBT switches to a closed state.In addition to the IGBT, the module also includes a diode connected in antiparallel with the IGBT. This diode conducts current when the IGBT is in an open state and prevents the voltage at the collector from rising too high.In summary, the FP75R06KE3BOSA1 module is an ideal choice for high-power applications due to its robust design and wide temperature range. It is widely used in motor control, power conversion, and switching applications. The module operates by switching the IGBT on and off, with the switching speed determined by the gate voltage. The module also includes a diode connected in antiparallel with the IGBT to protect the circuit from voltage spikes.

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