Allicdata Part #: | FP75R12KT4B15BOSA1-ND |
Manufacturer Part#: |
FP75R12KT4B15BOSA1 |
Price: | $ 95.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 75A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R12KT4B15BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 86.97150 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 385W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FP75R12KT4B15BOSA1 application field and working principle
Transistors - IGBTs - Modules
FP75R12KT4B15BOSA1 is a part of an Insulated Gate Bipolar Transistor (IGBT) module. It features a high current carrying capacity, a low voltage drop across the module, and an extremely high switching speed. Due to these characteristics, the FP75R12KT4B15BOSA1 is an excellent choice for applications in various industries including automotive, aerospace, industrial automation, medical, and consumer electronics.
The FP75R12KT4B15BOSA1 consists of a single IGBT and two diodes in a two-terminal package. The IGBT is a three-terminal device that combines a bipolar junction transistor (BJT) and a metal-oxide-semiconductor field-effect transistor (MOSFET). This enables the device to carry a high current without the need for an extra transistor. The diodes reduce resistance and improve the efficiency of the IGBT.
The working principle behind the FP75R12KT4B15BOSA1 is quite simple. When the IGBT’s gate is driven with a positive voltage, it turns on, allowing current to flow between the collector and the emitter. This current is then allowed to flow across the two diodes in the same fashion. By controlling the voltage applied to the gate, the current can be varied according to the desired application.
Due to its combination of low conduction losses and high switching speed, the FP75R12KT4B15BOSA1 is an exceptionally versatile electronic device. It is commonly used in a variety of applications such as Inverters, Motor Controls, Uninterruptible Power Supplies, and Motor Drivers. Additionally, the device is suitable for harsh environments as it is insulated in an epoxy package and able to withstand up to 200°C without suffering any damage.
In summary, the FP75R12KT4B15BOSA1 is a highly optimized IGBT module. It combines low conduction losses, high current carrying, and high switching speed, making it an ideal choice for a variety of applications. Additionally, the device is highly reliable and able to withstand extreme temperatures without suffering any damage.
The specific data is subject to PDF, and the above content is for reference
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