Allicdata Part #: | FP75R12KT4B16BOSA1-ND |
Manufacturer Part#: |
FP75R12KT4B16BOSA1 |
Price: | $ 104.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO3-3 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R12KT4B16BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 95.35820 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 385W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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An FP75R12KT4B16BOSA1 is an insulated gate bipolar transistor (IGBT) module that is used in many consumer, commercial and industrial applications. The IGBT module is a power semiconductor device that is used to control high-power currents and is used in motor control, power transmission, and industrial applications. The FP75R12KT4B16BOSA1 is characterized by its high current and power handling capacity, and its low on-state voltage drop. It is also highly efficient and reliable, making it a popular choice for many applications.
The IGBT module is composed of two main components: a power transistor and a gate driver. The power transistor is responsible for the actual control of the current, while the gate driver controls the gate of the power transistor and the switching of the power transistor. The power transistor and the gate driver are both integrated into the same package, making the module easier to install and maintain than one that consists of separate components.
Since the power transistor and the gate driver are integrated into a single package, the module is often referred to as a monolithic power module. The FP75R12KT4B16BOSA1 module is designed to operate in a wide range of temperatures and can handle voltages up to 1600 volts. The IGBT module also has a wide range of applications, such as motor control, power distribution, AC-DC conversion, power factor correction, and more.
The working principle of the FP75R12KT4B16BOSA1 module is based on the operation of MOSFET technology. When a voltage is applied to the gate of the power transistor, the voltage between the collector and emitter of the transistor is reduced, effectively allowing current to flow. This current is then used to control the switching of the transistor. The gate driver then controls the switching of the power transistor, allowing the user to control the current flow.
The IGBT module is a powerful and reliable device that is used in many applications. It is highly efficient, has a wide operating temperature range, and can handle high currents in a very small form factor. The FP75R12KT4B16BOSA1 module has a wide range of applications and is well-suited for use in motor control, power distribution, AC-DC conversion, and more.
The specific data is subject to PDF, and the above content is for reference
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