Allicdata Part #: | FP75R17N3E4BPSA1-ND |
Manufacturer Part#: |
FP75R17N3E4BPSA1 |
Price: | $ 117.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 75A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R17N3E4BPSA1 Datasheet/PDF |
Quantity: | 1000 |
300 +: | $ 106.60900 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 125A |
Power - Max: | 555W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FP75R17N3E4BPSA1 is an insulated gate bipolar transistor (IGBT) module which is designed for applications that require high power switching with low ON voltage. It is commonly used for industrial applications like motor control, power conversion, and renewable energy. It is also useful for other applications such as welding, lighting, and server supplies.
The FP75R17N3E4BPSA1 is a three-phase IGBT module with a maximum junction temperature (Tj) of 150°C. It has a collector-emitter voltage (Vce) of 1700V and a DC current (Ic) of 750A. Other features include a minimum voltage drop (Vf) of 1.45V at the source, a parasitic diode rated at I(F) of 3.2A at V(F) of 1.45V and a di/dt of 8 500 A/μs. It also has a pulse noise immunity rating of 2.5% and can handle an AC ripple current of 330A.
The FP75R17N3E4BPSA1 IGBT module works by controlling the current flow between the collector and emitter. It consists of two parts: a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). By applying a small voltage on the gate lead (G), the MOSFET can be turned on or off. This enables the module to block or allow current flow to the collector and emitter. Additionally, the BJT component enables the module to switch high voltages efficiently.
The FP75R17N3E4BPSA1 IGBT module is mainly used for controlling motor applications, such as servo motors, pumps, and compressors, as well as power conversion, such as HVDC converters, UPS, and renewable energy. It is also perfect for other applications, such as welding, lighting, and server supplies. The module offers high power switching with low ON voltage, fast response times and high immunity to pulse noise. Its rugged construction and high temperature rating makes it suitable for industrial applications.
The FP75R17N3E4BPSA1 is a great choice for applications that require cost-effective, reliable high power switching with low ON voltage. Its high temperature capabilities and rugged construction make it ideal for industrial applications, while its fast response times and immunity to pulse noise make it suitable for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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