FP75R12N2T4B11BPSA1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	--
Vce(on) (Max) @ Vge, Ic:	--
Input:	--
Operating Temperature:	--
Mounting Type:	--
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Supplier Device Package:	--

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FP75R12N2T4B11BPSA1 Application Field and Working Principle

Introduction

FP75R12N2T4B11BPSA1 is a family of insulated gate bipolar transistors (IGBTs) marketed by Infineon. It consists of a main designed N-channel MOS field-effect transistor (MOSFET) and a lateral PNP bipolar transistor. This PNP transistor is used as a free-wheeling diode, making the IGBT a module. IGBTs are used in many different applications and provide a number of benefits compared to other semiconductor components. In this article, we will discuss the application fields in which FP75R12N2T4B11BPSA1 modules are used and their working principle.

Application Fields

FP75R12N2T4B11BPSA1 modules are used primarily in high-power electronic applications, including power inverters and motor drives. Inverters are used to convert direct current (DC) power into alternating current (AC) power, while motor drives are used to control the speed and torque of electric motors. FP75R12N2T4B11BPSA1 modules are also frequently used in power supplies, automotive and aerospace products, and industrial and consumer electronics. These modules are designed to be incredibly efficient and reliable, even in extreme temperatures and hostile environments.

Working Principle

FP75R12N2T4B11BPSA1 modules employ an N-channel MOSFET and a lateral PNP bipolar transistor. The MOSFET is used to switch the power in a circuit, while the PNP bipolar transistor is used as a free-wheeling diode. The two components are operated together in a process known as commutation. Whenever the MOSFET is switched off, the PNP transistor acts as a diode and ensures that a reverse current is blocked from flowing through the circuit. This process prevents damage to the circuit, increases energy efficiency and ensures that the components in the circuit are well protected.In addition, the integrated components of the FP75R12N2T4B11BPSA1 module ensure fast commutation between conduction and blocking states, resulting in reduced switching losses. This allows the circuit to operate more efficiently and rapidly, leading to better performance and reliability.

Conclusion

In conclusion, FP75R12N2T4B11BPSA1 modules are commonly used in a wide range of high-power electronic applications, including power inverters, motor drives and power supplies. The integrated components of the module ensure fast commutation between conduction and blocking states, resulting in reduced switching losses, improved efficiency and better reliability.

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