Allicdata Part #: | FP75R12N2T4BOSA1-ND |
Manufacturer Part#: |
FP75R12N2T4BOSA1 |
Price: | $ 98.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | LOW POWER ECONO |
More Detail: | IGBT Module |
DataSheet: | FP75R12N2T4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 89.50760 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | -- |
Vce(on) (Max) @ Vge, Ic: | -- |
Input: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
Description
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The FP75R12N2T4BOSA1 module is a type of Insulated Gate Bipolar Transistor (IGBT), which is commonly used for switching applications in a variety of industries. This particular IGBT module is manufactured by Fu Jit Industrial Company, one of the leading manufacturers of IGBTs in the world.An IGBT is essentially a combination of a MOSFET and a traditional bipolar junction transistor. It combines the high-speed switching and low-loss characteristics of a MOSFET with the low-voltage drive capability of a BJT. As a result, IGBTs are capable of providing higher performance and operating efficiency than either of their predecessors.The FP75R12N2T4BOSA1 module offers a wide range of features including high current flow capabilities and high switching speeds, making it well-suited for a variety of industrial applications. With its low-loss characteristics, it can be used for many purposes including motor control, power conversion, and power management.This module features a maximum current capability of 75A, a maximum voltage of 1200V, and a voltage drop of 0.2V when operating. It also offers a low thermal resistance and can work in temperatures ranging from -40 to 150 degrees Celsius.The FP75R12N2T4BOSA1 module features its own built-in protection features such as short-circuit protection and current limiting. This helps to ensure that the module functions properly and safely under a variety of operating conditions.When used in an application, the module works by allowing current to flow through a pair of transistors (N-channel and P-channel). When the input voltage is applied to the module, the base current injects electrons into the N-channel transistor, causing it to conduct electricity. This in turn causes the P-channel transistor to become blocked, allowing current to flow between the drain and the source. This allows the module to perform the desired switching operation.The FP75R12N2T4BOSA1 module is capable of providing a highly efficient means of completing various tasks. It can be used to switch between multiple loads, inverter circuits, rectifiers, and other power management tasks. Its wide range of features makes it suitable for a variety of industrial applications.In conclusion, the FP75R12N2T4BOSA1 module is a versatile IGBT product that offers a wide range of features and benefits. Its high performance and low-loss characteristics make it a great choice for a variety of applications, including motor control, power conversion, and power management tasks.
The specific data is subject to PDF, and the above content is for reference
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