Allicdata Part #: | FP75R12KT4B11BOSA1-ND |
Manufacturer Part#: |
FP75R12KT4B11BOSA1 |
Price: | $ 104.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 75A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R12KT4B11BOSA1 Datasheet/PDF |
Quantity: | 19 |
1 +: | $ 95.02290 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 385W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FP75R12KT4B11BOSA1 is a module commonly used in large scale drives, UPS systems, wind turbine generators and other power electronics applications. It is a semiconductor device with a wide range of applications due to its robust properties of being able to handle high voltage, power, and current.
The FP75R12KT4B11BOSA1 is characterized by its fast speed, low switching noise and low on-state resistance. The module includes several insulated-gate bipolar transistors (IGBTs) and has a voltage rating of 1.2kV and a current rating of 27A. This device has a maximum junction temperature of 150°C, a frequency of 16kHz, and an on-state resistance of 1.3mΩ.
The FP75R12KT4B11BOSA1 is designed in such a way that it can be used as an electronic switching device in either an alternating current (AC) or direct current (DC) application. In AC applications, the device can be used to switch in, out, or regulate high-voltage AC lines, where the device works by rectifying AC power into DC and then using an IGBT to control the power. In DC applications, the device can be used for controlling power in DC motor drives, providing quick and reliable control for power applications.
The most important part of the FP75R12KT4B11BOSA1 is the IGBT, a type of transistor that combines the characteristics of both a metal oxide field-effect transistor (MOSFET) and a bipolar junction transistor. IGBTs can be used either in insulated-gate bipolar transistor (IGBT) or insulated gate commutated thyristor (IGCT) mode, with the latter offering higher switching speeds and control of large inductive loads. The IGBT switches are connected in a three-phase bridge configuration, allowing the module to control both the current and voltage of the motor.
The working principle of the FP75R12KT4B11BOSA1 is quite simple. When a positive voltage is applied to the one side of the IGBT, the device closes, completing an electrical circuit and allowing current to flow. This flow of current is then regulated by setting the voltage at the other side of the device, which opens or closes the protective insulated gate and therefore controls the amount of current allowed to pass. This process is repeated as many times as needed in order to achieve the desired output.
The FP75R12KT4B11BOSA1 is a versatile semiconductor module capable of handling high power and current, and able to perform both AC and DC switching functions with versitility and accuracy. As such, it is a device that can be used in a wide range of power electronic applications, including drives, UPS systems, wind turbine generators, and other power electronic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FP75R12KT4B11BOSA1 | Infineon Tec... | 104.52 $ | 19 | IGBT MODULE 1200V 75AIGBT... |
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