FP75R07N2E4B11BOSA1

The FP75R07N2E4B11BOSA1 is a field-stop insulated gate bipolar transistor (IGBT) module and is a power semiconductor device for high voltage and power applications. It has a very low on-state conduction loss and is suitable for high power switching applications with up to 10kV blocking voltage ratings. The devices in this series are designed to be used in switching applications and are constructed with a power module package, which provides efficient heat spreading and thermal management. This module is built with a low-resistance, high-density substrate and combines the technologies of high voltage power MOS and bipolar junction transistors into one module.

An IGBT module is a three-terminal semiconductor device that is constructed with two dielectrics with a conducting layer between them. The dielectrics are usually silicon and silicon dioxide, and the conducting layer is usually polysilicon or poly-Si which creates an insulating layer. The device functions by controlling the flow of current between the collector and emitter terminals using the gates. When a voltage is applied to the gate, the IGBT is turned ON and is able to conduct current between the collector and emitter. When the gate voltage is removed, the IGBT turns OFF and stops current flow.

The design and construction of the FP75R07N2E4B11BOSA1 module helps to reduce the body diode reverse recovery times which minimizes power losses. This device also helps to reduce electromagnetic interference (EMI) and radio frequency interference (RFI). It is also designed with a wide operating temperature range from -40°C to +125°C and it has an extremely high current rating of up to 900A (maximum). In addition, the device is RoHS compliant and UL listed for safety.

The FP75R07N2E4B11BOSA1 is commonly used in solar inverters, motor drives, UPS systems, industrial automation, and AC/DC converters. In solar inverters, its functions include inverting the DC voltage from solar panels into AC voltage to be used by household and municipal electricity systems. In motor drives, it is used to provide power to control motors or drives and adjust their speed and position. Its applications in UPS systems include using it as a power switch in bypass systems, keeping the power supply or load running even if the device fails. It is also used in industrial automation systems such as robotic and motion control. In AC/DC converters, it is used to convert AC power to DC power for microprocessors and other digital circuits.

The FP75R07N2E4B11BOSA1 is a highly reliable, high power, low leakage, and low EMI/RFI module that can be used for a variety of applications requiring high voltage and power. It is specifically designed for high power switching applications with up to 10kV blocking voltage ratings and provides efficient heat spreading and thermal management. This module is built with a low-resistance, high-density substrate and combines the technologies of high voltage power MOS and bipolar junction transistors into one module. It is also RoHS compliant and UL listed for safety. The wide operating temperature range and high current rating allows the device to be used in many high voltage and power applications, including solar inverters, motor drives, UPS systems, industrial automation, and AC/DC converters.