FP75R12KE3BOSA1 Allicdata Electronics
Allicdata Part #:

FP75R12KE3BOSA1-ND

Manufacturer Part#:

FP75R12KE3BOSA1

Price: $ 107.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 1200V 75A
More Detail: IGBT Module NPT Single 1200V 105A 355W Chassis Mou...
DataSheet: FP75R12KE3BOSA1 datasheetFP75R12KE3BOSA1 Datasheet/PDF
Quantity: 19
1 +: $ 97.28460
Stock 19Can Ship Immediately
$ 107.01
Specifications
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 105A
Power - Max: 355W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 5.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FP75R12KE3BOSA1 is an efficient, high-performance insulated gate bipolar transistor (IGBT) power module that combines two separate chips, a thin wafer FET (field effect transistor) and a planar chip bipolar transistor, into one semiconductor integrated circuit. This power module has a variety of uses in various industrial and consumer applications, ranging from power supply systems to heating, ventilation and air conditioning systems.

FP75R12KE3BOSA1 can be used in commercial and industrial power applications, such as grids, motor control, UPS systems, data communications, switching mode power supply and renewable energy systems. It has a very low switching loss and high input power, making it a great choice for power switching and converter applications.

This module also offers excellent thermal performance and is able to withstand extreme temperatures. It has excellent EMI suppression and is able to manage external noise and disturbance, making it a great choice for high-emission, sensitive applications. It is also compliant with the JEDEC standards for Joule creepage testing, electrical noise testing and resistance to humidity.

The main advantage of FP75R12KE3BOSA1 IGBT modules is how they combine two discrete chips into one small package. This allows for a compact design, increasing efficiency and reducing size and cost. The enhanced cooling of this module also adds to its efficiency, as it is able to dissipate more heat from the connection without the need for heat sinks.

FP75R12KE3BOSA1 works on a principle of accepting current from gate terminal through FET, and allowing current to flow from collector terminals through bipolar transistor. This is known as the “emitter-follower” topology, a common transistor switching technology. When the gate voltage is increased, the module switches on, allowing current to flow from the collector. When the gate voltage is reduced, the module switches off, disconnecting the collector and halting current flow.

The FP75R12KE3BOSA1 module is a great choice for industrial and commercial applications that require a reliable and efficient power source. Its combination of enhanced cooling, excellent EMI suppression, low switching loss and high input power makes it an efficient and cost-effective power switching and converter solution. Its compact form factor makes it great for applications that require a small footprint, such as medical and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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