Allicdata Part #: | FP75R12KE3BOSA1-ND |
Manufacturer Part#: |
FP75R12KE3BOSA1 |
Price: | $ 107.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 75A |
More Detail: | IGBT Module NPT Single 1200V 105A 355W Chassis Mou... |
DataSheet: | FP75R12KE3BOSA1 Datasheet/PDF |
Quantity: | 19 |
1 +: | $ 97.28460 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 105A |
Power - Max: | 355W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 75A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 5.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FP75R12KE3BOSA1 is an efficient, high-performance insulated gate bipolar transistor (IGBT) power module that combines two separate chips, a thin wafer FET (field effect transistor) and a planar chip bipolar transistor, into one semiconductor integrated circuit. This power module has a variety of uses in various industrial and consumer applications, ranging from power supply systems to heating, ventilation and air conditioning systems.
FP75R12KE3BOSA1 can be used in commercial and industrial power applications, such as grids, motor control, UPS systems, data communications, switching mode power supply and renewable energy systems. It has a very low switching loss and high input power, making it a great choice for power switching and converter applications.
This module also offers excellent thermal performance and is able to withstand extreme temperatures. It has excellent EMI suppression and is able to manage external noise and disturbance, making it a great choice for high-emission, sensitive applications. It is also compliant with the JEDEC standards for Joule creepage testing, electrical noise testing and resistance to humidity.
The main advantage of FP75R12KE3BOSA1 IGBT modules is how they combine two discrete chips into one small package. This allows for a compact design, increasing efficiency and reducing size and cost. The enhanced cooling of this module also adds to its efficiency, as it is able to dissipate more heat from the connection without the need for heat sinks.
FP75R12KE3BOSA1 works on a principle of accepting current from gate terminal through FET, and allowing current to flow from collector terminals through bipolar transistor. This is known as the “emitter-follower†topology, a common transistor switching technology. When the gate voltage is increased, the module switches on, allowing current to flow from the collector. When the gate voltage is reduced, the module switches off, disconnecting the collector and halting current flow.
The FP75R12KE3BOSA1 module is a great choice for industrial and commercial applications that require a reliable and efficient power source. Its combination of enhanced cooling, excellent EMI suppression, low switching loss and high input power makes it an efficient and cost-effective power switching and converter solution. Its compact form factor makes it great for applications that require a small footprint, such as medical and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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