Allicdata Part #: | FP75R12KT4BOSA1-ND |
Manufacturer Part#: |
FP75R12KT4BOSA1 |
Price: | $ 95.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 75A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R12KT4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 86.97150 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 385W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An FP75R12KT4BOSA1 is an insulated gate bipolar transistor (IGBT) module, containing one IGBT that switches power between two points in an electronic circuit. It combines the power-switching capability of a high-end MOSFET with the low voltage control of a BJT, providing a cost-effective solution for many current power applications.
The FP75R12KT4BOSA1 is suitable for high current, high power applications. It can handle voltages up to 1200 V and can switch currents up to 75 A. It has a low switching speed and provides excellent thermal-mechanical behavior, making it a great choice for applications that require sustained high power switching.
An FP75R12KT4BOSA1 has two main components: a gate-controlled insulated gate bipolar transistor (IGBT) and an anti-parallel diode. The IGBT acts as a switch that can be opened or closed to quickly switch power between two separate points in a circuit. When the gate of the IGBT is turned off, the circuit is open and current does not flow. When the gate is turned on, current begins to flow and the circuit is closed. The anti-parallel diode acts as a safety device, providing a discharge path for any inductive kickback that would otherwise damage the IGBT.
The FP75R12KT4BOSA1 is a suitable choice for a wide range of applications, such as robotics, air conditioning, power supplies, drives and motor controllers, electric vehicles, and machine automation. Its capability to handle both high power and high current applications makes it a great option for applications that require both fast switching and a high degree of efficiency.
The FP75R12KT4BOSA1 is a highly efficient power switching device. Its low on-resistance and low switching times provide for high power-switching efficiency. It also has a high thermal resistance and high stability, allowing it to maintain stable performance under varying conditions.
In conclusion, the FP75R12KT4BOSA1 is a suitable choice for many power applications that require a fast switching, high efficiency, and high current handling. It is a great choice for applications in robotics, air conditioning, power supplies, drives, motor controllers, electric vehicles, and machine automation. Its low on-resistance, low switching times, and high thermal resistance make it a great choice for applications requiring sustained high-power switching.
The specific data is subject to PDF, and the above content is for reference
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