Allicdata Part #: | FP75R07N2E4BOSA1-ND |
Manufacturer Part#: |
FP75R07N2E4BOSA1 |
Price: | $ 58.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 75A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R07N2E4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 53.49200 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 95A |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
?FP75R07N2E4BOSA1 Application Field and Working Principle
The FP75R07N2E4BOSA1 is a Field-Stop IGBT module featuring high performance and rated at 7500V/75A. It has good turn-on characteristics and superior third order distortion protection, making it ideal for use in applications such as motor control, traction, and welding.
This IGBT module uses a Field-Stop design in which the gate-emitter and gate-drain paths are isolated from the main circuit and connected by separate paths, allowing higher voltage and energy isolation in high-power applications. Its turn-on characteristics are also enhanced by the increased control of the gate drive and gate leakage current.
The FP75R07N2E4BOSA1 has an inherently soft fail mode that ensures safe operation in case of a fault. The prompt current limitation and high-frequency EMI protection in the module ensure that the equipment is promptly shut down following a fault, minimizing the risk of overheating and damage.
The module operates at a nominal frequency of 723kHz, which is ideal for applications that require optimized power conversion as it minimizes switching losses and reduces the size of the magnetics components. Its fast-switching capabilities also enable high-controllability.
To reduce the cost of higher-power applications, the FP75R07N2E4BOSA1 is designed to be used in high-density applications and minimize thermal losses. Its double-side cooling and a hybrid heat sink design with large pins reduces the power losses that normally occur in higher-power applications, making it suitable for high-power applications that require optimized performance.
In summary, the FP75R07N2E4BOSA1 Field-Stop IGBT module offers high performance, robustness, and cost savings for high-power applications. It offers excellent current-limiting and EMI protection, a high switching frequency, and optimized thermal design, which make it suitable for a wide range of applications such as motor control, traction, and welding.
The specific data is subject to PDF, and the above content is for reference
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