Allicdata Part #: | FP75R12KT4PB11BPSA1-ND |
Manufacturer Part#: |
FP75R12KT4PB11BPSA1 |
Price: | $ 103.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO3-3 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP75R12KT4PB11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 94.34670 |
Series: | EconoPIM™3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
FP75R12KT4PB11BPSA1 is a high-performance IGBT module produced by Fairchild Semiconductor. This module uses a unique wafer level packaging process called Direct Copper Bonded (DCB) to efficiently and effectively cool the electrical components inside the module. The FP75R12KT4PB11BPSA1 module is rated for use up to 1200 Volts and is capable of switching power up to 1600 Amps. This makes the module ideal for applications in energy conversion and motor control systems.
Application Field
The FP75R12KT4PB11BPSA1 module can be used in a wide variety of applications, including renewable energy conversion, DC/AC Inverters, solar power generation, motor control, electric vehicle systems and more. Its high current and voltage ratings make it ideal for high power applications. The module can also be used for motor control applications due to its high switching speed and accuracy.
Working Principle
The FP75R12KT4PB11BPSA1 uses insulated gate bipolar transistors (IGBTs) to control current flow. IGBTs are composed of a gate, source and drain. When a gate voltage is applied, this voltage changes the IGBT\'s internal resistance and allows current to flow from the source to the drain. This change in the internal resistance creates a voltage drop that is proportional to the amount of current flowing, allowing the user to precisely control and vary the amount of current.
The FP75R12KT4PB11BPSA1 module uses a Direct Copper Bonded (DCB) process for efficient cooling and heat dissipation. DCB is a patented process that uses a high temperature-coefficient dielectric layer to bond directly to the copper backing which holds the IGBTs. This ensures maximum power density by reducing the amount of thermal resistance between the IGBT and its surrounding environment. The module also features advanced anti-cogging protection for motor control applications.
Conclusion
The FP75R12KT4PB11BPSA1 is a high-performance IGBT module from Fairchild Semiconductor that is rated for up to 1200 Volts and 1600 Amps. It is ideal for applications that require high voltage and power, such as renewable energy conversion, motor control, and DC/AC inverters. The module uses a Direct Copper Bonded process for efficient cooling and heat dissipation, as well as advanced anti-cogging protection. These features make it the ideal choice for applications requiring high performance and power.
The specific data is subject to PDF, and the above content is for reference
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