Allicdata Part #: | FQA30N40-ND |
Manufacturer Part#: |
FQA30N40 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 30A TO-3P |
More Detail: | N-Channel 400V 30A (Tc) 290W (Tc) Through Hole TO-... |
DataSheet: | FQA30N40 Datasheet/PDF |
Quantity: | 711 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQA30N40 is a semiconductor device that belongs to the family of field effect transistors (FETs). It is a single (FET) type of MOSFET (metal-oxide-semiconductor field-effect transistor). The FQA30N40 is widely used for low and medium power applications, especially in power limiting and voltage regulation applications in digital circuits. The device is also well suited for use in audio circuits, such as high-attenuation and low-impedance circuits.
The FQA30N40 consists of four terminals; gate, drain, and source. The gate terminal is the control terminal of the device and is used to control the drain current by varying the gate voltage; this process is known as gate control. The drain terminal is the output terminal of the device and is used to deliver the drain current to the load. The source terminal is the input terminal of the device and is used to deliver the drain current to the load through drain-source path.
The FQA30N40 works based on the principle of a voltage-controlled resistor. When a gate voltage is applied to the gate terminal, an electric field is created at the gate-source junction, which modulates the conductivity or resistance between the source and drain terminals. This modulation of the resistance is proportional to the applied gate voltage and is known as the body effect. As a result, the drain current is varied by the voltage applied to the gate terminal.
The advantages of the FQA30N40 include high stability, low noise, reliable operation, high input impedance, low leakage current, high switching capability, and low power consumption. The device also has excellent protection against overload and short-circuit conditions. The device is also available in different packages such as DIP, TO-220, and SSOP.
The FQA30N40 is widely used in a variety of applications. It is best suited for low and medium power applications, especially in power limiting and voltage regulation applications in digital circuits. It is also used in audio circuits such as high-attenuation and low-impedance circuits, and RF converters. It can also be used for load shedding, motor control, and in automotive applications.
In conclusion, the FQA30N40 is a single (FET) type of MOSFET that is used in low and medium power applications. It has a high stability, low noise, and excellent protection against overload and short-circuit conditions. It is best suited for applications in power limiting and voltage regulation, audio circuits, RF converters, load shedding, motor control, and in automotive applications.
The specific data is subject to PDF, and the above content is for reference
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