Allicdata Part #: | FQA33N10-ND |
Manufacturer Part#: |
FQA33N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 36A TO-3P |
More Detail: | N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-... |
DataSheet: | FQA33N10 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 163W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA33N10 is a common power field-effect transistor (FET) that is typically used to boost performance in a variety of applications. It is classified as a single-N-channel MOSFET, meaning that it is designed to operate with a single voltage, as opposed to dual-channel MOSFETs or other power FETs that require two voltages for operation. The FQA33N10 is particularly useful for applications that need higher power handling capabilities and better efficiency than conventional transistors can provide.
When it comes to the field of application for the FQA33N10, this power FET can be used to control power in a variety of applications, from lighting, to motor controls, and switching applications. This power FET is also often used in applications such as audio amplifiers, voltage regulators, and high-frequency switching applications. The FQA33N10 is also often employed in audio amplifiers, radio receivers, and embedded systems that require precise control of the voltage and current.
The working principle of the FQA33N10 is relatively simple. It is designed to act as a controlled switch, allowing the flow of current through it when a certain voltage is applied. This FET uses an insulated gate to control the voltage, meaning that it will remain shut until the correct voltage is present. Once the voltage is present, a current can begin flowing through the FET, allowing it to act as a switch and control the power of the application.
The FQA33N10 is a powerful and efficient power field effect transistor which has the ability to control high power and provide high efficiency in many applications. It is quite popular due to its relatively low price point and its ability to provide precise control over voltage and current. The FQA33N10 is one of the most commonly used power FETs and can be found in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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