Allicdata Part #: | FQA36P15-ND |
Manufacturer Part#: |
FQA36P15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 150V 36A TO-3P |
More Detail: | P-Channel 150V 36A (Tc) 294W (Tc) Through Hole TO-... |
DataSheet: | FQA36P15 Datasheet/PDF |
Quantity: | 595 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 294W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3320pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQA36P15 is a power MOSFET (metal-oxide-semiconductor field-effect transistor), with its gate voltage applied, is capable of controlling much higher voltages and higher currents than other types of transistors. This MOSFET comes in a wide variety of sizes, from TO-220 through Large Can, and from Shallow Trench Isolation (STI) through Powerpak and PowerCases. FQA36P15 is designed to work with DC and AC power sources. This MOSFET offers similar performance to many other similar-sized devices, but it also offers certain specific features that make it suitable for certain applications.
The primary application field of FQA36P15 is controlling power. It works as an electronic switch, able to turn power on or off as needed, making it a great choice for switching motors and ac/dc loads. It can also be used to control high voltage or high current to create high power, or as a linear amplifier in instrumentation applications.
The working principle of FQA36P15 is based on the field-effect of the MOSFET. When a natural or artificial electric field is applied to the gate of the MOSFET, it induces a conducting channel between the source and drain, allowing current to flow. The more voltage is applied to the gate, the wider the conducting channel becomes, and more current can flow through it. By controlling the amount of voltage applied to the gate, the current flow through the channel can be controlled with great precision.
In addition to these basics of field-effect control, FQA36P15 also has certain features and parameters that make it especially suitable for certain applications. It has very low gate-to-drain capacitance, making it ideal for high-speed switching applications such as driving LEDs and other loads with high frequencies and high-resolution PWM. It has a very low threshold voltage, giving it good linearity. Its low temperature range makes it ideal for low temperature operating conditions. Lastly, its high-temperature ratings make it capable of operating in environments with high temperatures.
The FQA36P15 is an excellent choice for controlling power in many applications. Its low-capacitance and high-temperature properties make it ideal for high-speed switching and high-temperature applications. Its low-voltage and low-temperature capabilities make it suitable for many instrumentation and linear amplifier applications. With its easy installation and exceptional ability to control power, the FQA36P15 is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FQA36P15_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 150V 36A TO-3... |
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