FQA38N30

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The FQA38N30 is an insulated-gate field-effect transistor (IGFET) that belongs to the group of metal oxide semiconductor field-effect transistors (MOSFETs). It is a three-terminal, fully-depletion FET device with a single n-type channel. The device is designed for use in amplifying, switching, and interfacing applications. The FQA38N30 has a breakdown voltage of 30 volts, gate-source capacistance of 1.8 pF, gate threshold voltage of -2.3 volts, and continuous drain current of up to 38A. It is available in an industry standard SOT-223 package.

In operation, an electric field generated by the Fowler-Nordheim tunneling principle controls the conductivity of the FQA38N30 between the source and drain terminals. The field is created by the charge applied to the gate terminal by the gate voltage. As the gate voltage becomes more positive, the field strength increases and the current flow across the drain-source terminals increases as well. In this manner, the FQA38N30 acts as a voltage-controlled switch to regulate the current flow from the source to the drain.

The FQA38N30 is primarily used in linear and switching applications. In linear applications, the FQA38N30 can be used to provide an amplified signal that can be used for voltage or current sensing, signal processing, signal switching, and motor control. The FQA38N30 can also be used in switching applications, such as power supply applications where its low on-resistance and high power capability make it well-suited to handle large currents.

The FQA38N30 has a continuous drain current of up to 38A and a maximum pulse current of up to 75A. The part also has a high switching speed, making it ideal for high-frequency applications. The FQA38N30 is rated to operate up to 175°C.

The FQA38N30 features a number of protection features. It has integrated ESD protection to protect the device from electrostatic discharge. It also has an over-temperature protection feature that will shut off the drain current when the operating temperature exceeds the rated limit. In addition, the part also has an integrated shield to prevent the buildup of electrostatic charge around the FQA38N30.

Because the FQA38N30 is a fully-depletion FET device, it does not suffer from the problems associated with partially-depletion FETs, such as leakage and threshold voltage shifts. This makes it well-suited for high-precision applications.

The FQA38N30 is a reliable, high-powered MOSFET device that can be used in a wide range of applications, from linear and switching applications to high-frequency and high-precision applications. Its features, such as its high-power capability and integrated protection features, make it an ideal choice for a variety of applications.

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