FQA32N20C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQA32N20C is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by the semiconductor company Fairchild Semiconductor. The device belongs to the ‘single’ category of MOSFETs, meaning that it consists of a single channel enabling the control of current in one specific direction. This transistor is readily available in a TO-220 package, with a drain current of 32amps and a drain-source voltage rating of 20volts.

The basic working principle of the FQA32N20C transistor is quite simple. At the transistor’s gate, an electrical charge is applied, and depending on its magnitude, the voltage travels across the channel in a specific direction, thus allowing a controlled current to flow from the source to the drain of the transistor.

The FQA32N20C offers a high drain-source breakdown voltage rating, and thus can be used in a wide range of applications. One of the most common applications of this transistor is as switch in DC power circuits, as it can efficiently control the current flow in one given direction. This transistor is also used in designing DC-DC converters and HV switching circuits, as well as in LED drivers and other high power applications.

The FQA32N20C has a broad range of characteristics that tailor it to many applications. This transistor has an excellent breakdown voltage rating, a very low on-resistance (1.2 milli-ohms) and is capable of withstanding very high switching currents (1.75A). Additionally, it is capable of withstanding very high temperature, 60+ degrees Celsius.

In conclusion, the FQA32N20C transistor makes for a great choice for many applications which require a reliable and highly efficient switch. Its low on-resistance coupled with its high power ratings make it especially suitable for high power DC-DC converters, HV switching circuits, and other high-temperature applications.

The specific data is subject to PDF, and the above content is for reference