Allicdata Part #: | FQA34N20L-ND |
Manufacturer Part#: |
FQA34N20L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 34A TO-3P |
More Detail: | N-Channel 200V 34A (Tc) 210W (Tc) Through Hole TO-... |
DataSheet: | FQA34N20L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQA34N20L is a high-performance silicon field-effect transistor (FET) designed for use in a variety of switching, attenuator, and low-noise amplifier applications. The device is available in an industry-standard TO-206AF plastic package, and is designed for use in demanding applications such as DC to GHz-range instrumentation, portable communications and aerospace applications.
The FQA34N20L transistor is a single, long-gate enhancement-mode FET that provides high-transconductance and low-noise performance. The transistor features a low input capacitance, high output current capability, and low on-state resistance. It also has a low thermal resistance junction to ambient, and its low capacitance provides excellent speed performance. The FQA34N20L is available in an industry-standard TO-206AF 4-lead vented plastic package, and can operate at temperatures ranging from 0 to 70 degrees Celsius.
The FQA34N20L transistor is designed for use as a switch in a variety of applications, including DC to GHz-range instrumentation and portable communications. The FQA34N20L has an input voltage range from -2.5 to 3.2 V and an output voltage range from -2.5 to 4 V. Its gate-source voltage is -2.5 to 4 V. The device is rated for a maximum transconductance of 4 mS, a maximum drain current of 7.2 A, and a maximum drain-source breakdown voltage of 160 V.
The working principle of the FQA34N20L transistor is based on the electrostatic control of conduction between the source and drain regions. The transistor is constructed with a gate insulator and a semiconducting channel between the source and drain regions. A positive voltage is applied to the gate, which induces an electric field that attracts electrons from the channel. As a result, current flow in the channel is controlled by the gate voltage, and the device can be used as a switch or an amplifier.
The FQA34N20L transistor is widely used in various applications, such as high-frequency switching, filtering, signal conversion, power switching, and low-noise amplification. It is also suitable for use in precision instrumentation, portable communications and aerospace applications.
The FQA34N20L transistor is an effective, reliable, and cost-effective device for a wide range of switching, filtering, and low-noise amplification applications. Its low capacitance and input voltage range provide excellent speed performance, while its high output current capability and low on-state resistance make it an ideal choice for applications requiring high power, precise signal control, and low-noise operation.
The specific data is subject to PDF, and the above content is for reference
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