Allicdata Part #: | FQA90N08-ND |
Manufacturer Part#: |
FQA90N08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 90A TO-3P |
More Detail: | N-Channel 80V 90A (Tc) 214W (Tc) Through Hole TO-3... |
DataSheet: | FQA90N08 Datasheet/PDF |
Quantity: | 295 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3250pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQA90N08 transistors are commonly employed in the field of power electronics due to their low on-resistance RDS(ON) and low capacitances. They are also among the most popular devices for high-power switching applications, such as motor control and other power management applications.
The FQA90N08 is a single high-voltage, low-on-resistance, enhancement-mode N-channel MOSFET operated in a wide range of gate voltages. It provides a low-resistance point between the source and drain which is specially designed for high current driving.
The rated drain-source voltage is 80V and the typical drain current range is up to 60A. It also has a breakdown voltage of >93V. This makes it suitable for high current switching not only in power electronics but also in applications such as speed controllers, power inverters and power supplies. The operating temperature of the device ranges from -55°C to 175°C.
The working principle of the FQA90N08 is based on the control of an electric field within the channel for the transfer of charge carriers from the source to the drain. The channel is created and sustained between the source and the drain electrodes due to the electric field from the gate electrode. This electric field has to be of sufficient strength to cause the flow of holes or electrons from the source to the drain depending on the device type.
The higher the gate voltage, the higher the electric field within the channel and the more charge carriers move from the source to the drain. This creates a high current flow from the source to the drain and a low on-resistance point. The current flow can be modulated by varying the gate voltage. The FQA90N08 is typically used in applications where fast switching times and/or high frequencies are required.
In addition to its low on-resistance RDS(ON), the FQA90N08 also has an exceptional low input capacitance of 7pF. This is lower than most FETs, which makes it ideal for use in high-frequency switching applications. The addition of on-resistance and input capacitance promotes efficient switching and high-speed operation, reducing EMI and improving reliability.
The FQA90N08 is a valuable device for various high power switching applications due to its low on-resistance and low input capacitance. It can sustain high drain currents and its excellent switching characteristics make it suitable for high saturation voltage and fast switching in power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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