Allicdata Part #: | FQA90N15-F109-ND |
Manufacturer Part#: |
FQA90N15-F109 |
Price: | $ 4.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 90A TO-3P |
More Detail: | N-Channel 150V 90A (Tc) 375W (Tc) Through Hole TO-... |
DataSheet: | FQA90N15-F109 Datasheet/PDF |
Quantity: | 241 |
1 +: | $ 4.29030 |
10 +: | $ 3.82977 |
450 +: | $ 2.83398 |
900 +: | $ 2.29783 |
1350 +: | $ 2.14464 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8700pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 285nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQA90N15-F109 is a Power MOSFET developed by Fairchild Semiconductor, a US-based global leader in semiconductor technology. The FQA90N15-F109 is a unique switching device offered by Fairchild and features an advanced feature set including an impressive on-resistance of only 1.5Ω, with a maximum current rating of 25A. This makes it ideal for many applications including high current switching, power management, and lighting.
The FQA90N15-F109 is a single N-Channel Enhancement Mode MOSFET, meaning it is able to move electrons from its source to its drain in a controlled manner. This is achieved by applying a voltage across its gate and source pins, which will cause electrons to flow from the drain to the source. This enables a lower-voltage control to regulate a higher voltage and higher current power flow between the source and drain.
The FQA90N15-F109 is most typically used in applications such as DC-DC converters, switch mode power supplies, and uninterruptible power supplies. It can also be used for light dimming, LED lighting, inverters and motor control, as it can operate at frequencies up to 200kHz. Additionally, the device offers fast switching times, from 1.2 ns on the rise time up to 13 ns for the fall time, making it ideal for complex signal processing and power switching applications maintaining fast response times.
The FQA90N15-F109 also exhibits excellent product integrity, featuring a strict 100 percent RF and surge tests during the manufacturing process to ensure the highest quality product. This is further enhanced by Very Low Gate Charge (VGC) of only 55nC, allowing for an easy and powering efficient switching when connected to the gate pin.
In comparison to other single N-Channel enhancement mode MOSFETs on the market, the FQA90N15-F109 offers several advantages including its high current rating of 25A sure to meet the demands of any design that require high current switching, as well as its very low on-resistance of only 1.5Ω. This makes the FQA90N15-F109 ideal for building higher power applications and systems that rely on higher currents and quick response times.
The FQA90N15-F109 is a powerful and reliable switching device ideal for many high-power applications. It features an impressive on-resistance, low gate charge, and low current rating, along with fast switching times, making it the ideal choice for any design requiring high currents and fast response times.
The specific data is subject to PDF, and the above content is for reference
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