Allicdata Part #: | FQA9N90C-F109-ND |
Manufacturer Part#: |
FQA9N90C-F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 9A TO-3P |
More Detail: | N-Channel 900V 9A (Tc) 280W (Tc) Through Hole TO-3... |
DataSheet: | FQA9N90C-F109 Datasheet/PDF |
Quantity: | 499 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQA9N90C-F109 is a nine-terminal MOSFET (metal–oxide–semiconductor field-effect transistor) device primarily used for power applications. It is a reliable and highly efficient semiconductor device.
As a power MOSFET, this device is used in a large number of consumer electronics and industrial applications including DC-DC converters, power supplies, motor and lighting control. It is also used in a variety of communication systems, from RF antenna switches and low-noise amplifiers to LCD bias circuits.
The FQA9N90C-F109 has an integrated amp output and is designed to drive loads up to 200VA, with a maximum voltage rating of 600V. It features a dedicated on-board protection circuit, allowing the device to switch loads quickly and safely. This MOSFET is also equipped with an integrated sub-circuit, which provides linear attenuation of the input voltage.
The FQA9N90C-F109 MOSFET is designed with a dual-gate structure, allowing the device to operate in both high- and low-frequency applications. It is also capable of handling high current spikes, such as those generated by inductive loads. This makes it ideal for use in motor control, lighting, and other applications that require fast switching and high power transfer.
The working principle of the FQA9N90C-F109 is relatively simple. When a voltage is applied to the gate, electrons are attracted and flow through a channel which is controlled by the gate voltage. This flow of electrons allows current to pass through the device and enables it to switch loads.
There are two primary characteristics of this MOSFET which differentiate it from other power MOSFETs and make it more suitable for use in certain applications. The first is its low on-state resistance (RDS-ON) and the second is its high drain-source voltage (VDSS). The low RDS-ON means that it requires lower power to switch loads, and due to higher VDSS it becomes possible to switch at high voltages.
The FQA9N90C-F109 is quite versatile and can be used in a wide range of applications where high-power, fast switching, and protection are needed. Its protection circuit, dual-gate structure, and low RDS-ON and VDSS make it ideal for applications such as DC-DC converters, power supplies, motor control, and lighting.
The specific data is subject to PDF, and the above content is for reference
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