Allicdata Part #: | FQA90N15FS-ND |
Manufacturer Part#: |
FQA90N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 90A TO-3P |
More Detail: | N-Channel 150V 90A (Tc) 375W (Tc) Through Hole TO-... |
DataSheet: | FQA90N15 Datasheet/PDF |
Quantity: | 202 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8700pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 285nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.Power FETs play an important role in switching and amplification. They are available in a wide range of configurations and are used in many different application fields. Due to their low on-resistance characteristics and ease of switching, FETs are advantageous for use in power management and other power-oriented applications. FQA90N15 silicon-gate, self-aligned, lateral MOSFETs are designed to provide low on-resistance and fast switching performance.
The FQA90N15 is a monolithic 30 V N-Channel power MOSFET with fast switching speed and low on-resistance to reduce power dissipation. It is suitable for use in electricity-dependent industrial, automotive and consumer applications, such as automotive and industrial motor driver, SMPS, DC-link, and battery-powered applications. The FQA90N15 MOSFET offers superior performance in terms of rDS(ON), and gate-charge.
The FQA90N15 offers excellent MOSFET characteristics for switching applications. It provides higherGate-source voltage, drain current and faster switching speed than other MOSFETs. It has a maximum drain-source voltage of 30V and a maximum drain current of 60A. It has a low gate-charge, fast switching speed and ultra-low ON-resistance capability, making it suitable for high speed operation. Furthermore, the FQA90N15 has excellent switching characteristics, high input impedance and a high linearity.
The working principle behind the FQA90N15 is simple. It is basically a three-terminal device, with a Gate, a Drain and a Source. The Gate terminal is a control terminal that allows a voltage to be applied which controls the device. When a voltage is applied to the Gate terminal, it creates an electric field in the MOSFET which modulates the conductivity of the Drain-Source channel. As the voltage applied to the Gate terminal increases, the Drain-Source channel resistance decreases, and the FQA90N15 can be used for Switching applications.
In addition, the FQA90N15 also offers superb thermal characteristics. It can withstand high temperatures, and it has a low thermal sensitivity which helps reduce potential thermal drift in the device. The power FET also features a low avalanche breakdown voltage of 40V, which further improves its performance in high-power applications.
Overall, FQA90N15 power FETs offer superior performance in switching applications, with superior on-resistance, fast switching times and a low gate-charge. They are advantageous for use in power management and other power-oriented applications due to their low on-resistance characteristics and ease of switching.
The specific data is subject to PDF, and the above content is for reference
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