FQA9N50 Allicdata Electronics
Allicdata Part #:

FQA9N50-ND

Manufacturer Part#:

FQA9N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 9.6A TO-3P
More Detail: N-Channel 500V 9.6A (Tc) 160W (Tc) Through Hole TO...
DataSheet: FQA9N50 datasheetFQA9N50 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQA9N50 is a single field-effect transistor (FET) used for a variety of analog and digital applications. It is made up of a metal-oxide-semiconductor (MOS) structure and designed for high-frequency operation, making it a great choice for power switching applications. It is also used in switching and level shifting circuits, where its low input capacitance makes it an excellent choice for low-power circuits and long delay times.

The FQA9N50 is a single-transistor field-effect transistor (FET) that consists of a gate, a source, and a drain. It is formed by creating an oxide layer on the surface of a semiconductor material, then laying down a transformation layer beneath it. This transformation layer is bridged to one of the contacts, the gate, which controls whether or not current flows between the source and drain. When the gate is open, current can flow between the source and drain, and when the gate is closed, current is prevented from passing through.

The FQA9N50 is typically used as either a p-channel or n-channel transistor. A p-channel FET has a positive voltage applied to the gate terminal, causing electrons to flow from the source to the drain in a channel of mobility carriers. An n-channel FET has a negative voltage applied to the gate terminal, which causes electrons to flow from the drain to the source in a channel of mobility carriers. The p-channel and n-channel transistors can be used separately or combined to switch between two different logic states.

The FQA9N50 has a very low ON resistance and is ideal for switching applications in which very high currents are switched in a short time. For example, it can be used in power transistor applications to quickly switch a large amount of current. It is also used in applications that require high-frequency AC signals to be switched on and off, as it has a very low input capacitance and thus can switch quickly and accurately in these types of applications. The FQA9N50 can also be used in level-shifting circuits, to transfer low-level digital signals between two different logic levels.

The FQA9N50 is a versatile single-transistor FET and is popular in a variety of analog and digital applications. It is ideal for power switching and high frequency AC switching applications, and can be used in level-shifting circuits to transfer low-level signals between two different logic levels. With its low On-resistance and input capacitance, it is a great choice for many power and RF applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQA9" Included word is 9
Part Number Manufacturer Price Quantity Description
FQA90N10V2 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 105A TO-...
FQA9P25 ON Semicondu... 1.86 $ 408 MOSFET P-CH 250V 10.5A TO...
FQA9N50 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 500V 9.6A TO-...
FQA9N90C ON Semicondu... -- 1000 MOSFET N-CH 900V 9A TO-3P...
FQA90N08 ON Semicondu... -- 295 MOSFET N-CH 80V 90A TO-3P...
FQA9N90-F109 ON Semicondu... -- 404 MOSFET N-CH 900V 8.6A TO-...
FQA9N90C-F109 ON Semicondu... -- 499 MOSFET N-CH 900V 9A TO-3P...
FQA90N15 ON Semicondu... -- 202 MOSFET N-CH 150V 90A TO-3...
FQA90N15-F109 ON Semicondu... 4.72 $ 241 MOSFET N-CH 150V 90A TO-3...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics