Allicdata Part #: | FQA9N50-ND |
Manufacturer Part#: |
FQA9N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 9.6A TO-3P |
More Detail: | N-Channel 500V 9.6A (Tc) 160W (Tc) Through Hole TO... |
DataSheet: | FQA9N50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA9N50 is a single field-effect transistor (FET) used for a variety of analog and digital applications. It is made up of a metal-oxide-semiconductor (MOS) structure and designed for high-frequency operation, making it a great choice for power switching applications. It is also used in switching and level shifting circuits, where its low input capacitance makes it an excellent choice for low-power circuits and long delay times.
The FQA9N50 is a single-transistor field-effect transistor (FET) that consists of a gate, a source, and a drain. It is formed by creating an oxide layer on the surface of a semiconductor material, then laying down a transformation layer beneath it. This transformation layer is bridged to one of the contacts, the gate, which controls whether or not current flows between the source and drain. When the gate is open, current can flow between the source and drain, and when the gate is closed, current is prevented from passing through.
The FQA9N50 is typically used as either a p-channel or n-channel transistor. A p-channel FET has a positive voltage applied to the gate terminal, causing electrons to flow from the source to the drain in a channel of mobility carriers. An n-channel FET has a negative voltage applied to the gate terminal, which causes electrons to flow from the drain to the source in a channel of mobility carriers. The p-channel and n-channel transistors can be used separately or combined to switch between two different logic states.
The FQA9N50 has a very low ON resistance and is ideal for switching applications in which very high currents are switched in a short time. For example, it can be used in power transistor applications to quickly switch a large amount of current. It is also used in applications that require high-frequency AC signals to be switched on and off, as it has a very low input capacitance and thus can switch quickly and accurately in these types of applications. The FQA9N50 can also be used in level-shifting circuits, to transfer low-level digital signals between two different logic levels.
The FQA9N50 is a versatile single-transistor FET and is popular in a variety of analog and digital applications. It is ideal for power switching and high frequency AC switching applications, and can be used in level-shifting circuits to transfer low-level signals between two different logic levels. With its low On-resistance and input capacitance, it is a great choice for many power and RF applications.
The specific data is subject to PDF, and the above content is for reference
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