Allicdata Part #: | FQA9P25FS-ND |
Manufacturer Part#: |
FQA9P25 |
Price: | $ 1.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 10.5A TO-3P |
More Detail: | P-Channel 250V 10.5A (Tc) 150W (Tc) Through Hole T... |
DataSheet: | FQA9P25 Datasheet/PDF |
Quantity: | 408 |
1 +: | $ 1.68210 |
10 +: | $ 1.52145 |
450 +: | $ 1.08675 |
900 +: | $ 0.85854 |
1350 +: | $ 0.78789 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 5.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQA9P25 is a high-power n-channel MOSFET transistor manufactured by Fairchild Semiconductor. The device is designed for applications requiring high switching speed and low on-resistance in surface-mount packages. It is especially well suited for high-power switching applications in harsh environments.
First and foremost, the FQA9P25 is a power MOSFET, which is a field-effect transistor (FET) that uses an electric field to control the conductivity between its source and drain. It is constructed using an insulated-gate structure and is typically used for switching applications. The FQA9P25 is an n-channel power MOSFET, meaning that it has an n-type source region and an n-type drain region.
The FQA9P25 is designed for use in a wide variety of applications, such as automotive, industrial, and commercial. It is well-suited for use in applications requiring high switching speeds and low on-resistance. It is also suitable for high-power switching applications, providing a low on-resistance and high switching speed.
Specifically, the FQA9P25 is designed for use in applications where high current capability and low conduction and switching losses are critical. These applications include DC/DC converters, SMPS, and other applications that use high-frequency switching. Additionally, the device is capable of maintaining its current density even under harsh environmental conditions.
Although the FQA9P25 is designed to be used in a wide variety of applications, it is most commonly used in automotive applications. For instance, due to its low on-resistance and high switching speed, it is well-suited for use in electric vehicle traction motor systems and powertrain control units. It can also be used in brake systems and solar cell inverters.
The working principle of the FQA9P25 is relatively simple. When a voltage is applied to the gate of the device, it attracts electrons from the source and creates an electric field that carries current from the drain to the source. As the electric field increases, the device allows more current to flow from the drain to the source, resulting in a high power gain.
The FQA9P25 is designed to provide excellent performance in both high-power and high-frequency applications. It is capable of high current and low drain-source on-resistance, making it ideal for high-power applications. Additionally, its high switching speed allows it to be used in high-frequency applications, such as switching power supplies.
In summary, the FQA9P25 is a high-power n-channel MOSFET transistor manufactured by Fairchild Semiconductor that is designed for use in a variety of applications, such as automotive, industrial, and commercial. Its working principle is relatively simple and it provides excellent performance in both high-power and high-frequency applications. Therefore, it is an ideal solution for applications requiring high switching speeds and low on-resistance in surface-mount packages.
The specific data is subject to PDF, and the above content is for reference
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