FQA9P25 Allicdata Electronics
Allicdata Part #:

FQA9P25FS-ND

Manufacturer Part#:

FQA9P25

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 250V 10.5A TO-3P
More Detail: P-Channel 250V 10.5A (Tc) 150W (Tc) Through Hole T...
DataSheet: FQA9P25 datasheetFQA9P25 Datasheet/PDF
Quantity: 408
1 +: $ 1.68210
10 +: $ 1.52145
450 +: $ 1.08675
900 +: $ 0.85854
1350 +: $ 0.78789
Stock 408Can Ship Immediately
$ 1.86
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 620 mOhm @ 5.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQA9P25 is a high-power n-channel MOSFET transistor manufactured by Fairchild Semiconductor. The device is designed for applications requiring high switching speed and low on-resistance in surface-mount packages. It is especially well suited for high-power switching applications in harsh environments.

First and foremost, the FQA9P25 is a power MOSFET, which is a field-effect transistor (FET) that uses an electric field to control the conductivity between its source and drain. It is constructed using an insulated-gate structure and is typically used for switching applications. The FQA9P25 is an n-channel power MOSFET, meaning that it has an n-type source region and an n-type drain region.

The FQA9P25 is designed for use in a wide variety of applications, such as automotive, industrial, and commercial. It is well-suited for use in applications requiring high switching speeds and low on-resistance. It is also suitable for high-power switching applications, providing a low on-resistance and high switching speed.

Specifically, the FQA9P25 is designed for use in applications where high current capability and low conduction and switching losses are critical. These applications include DC/DC converters, SMPS, and other applications that use high-frequency switching. Additionally, the device is capable of maintaining its current density even under harsh environmental conditions.

Although the FQA9P25 is designed to be used in a wide variety of applications, it is most commonly used in automotive applications. For instance, due to its low on-resistance and high switching speed, it is well-suited for use in electric vehicle traction motor systems and powertrain control units. It can also be used in brake systems and solar cell inverters.

The working principle of the FQA9P25 is relatively simple. When a voltage is applied to the gate of the device, it attracts electrons from the source and creates an electric field that carries current from the drain to the source. As the electric field increases, the device allows more current to flow from the drain to the source, resulting in a high power gain.

The FQA9P25 is designed to provide excellent performance in both high-power and high-frequency applications. It is capable of high current and low drain-source on-resistance, making it ideal for high-power applications. Additionally, its high switching speed allows it to be used in high-frequency applications, such as switching power supplies.

In summary, the FQA9P25 is a high-power n-channel MOSFET transistor manufactured by Fairchild Semiconductor that is designed for use in a variety of applications, such as automotive, industrial, and commercial. Its working principle is relatively simple and it provides excellent performance in both high-power and high-frequency applications. Therefore, it is an ideal solution for applications requiring high switching speeds and low on-resistance in surface-mount packages.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQA9" Included word is 9
Part Number Manufacturer Price Quantity Description
FQA90N10V2 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 105A TO-...
FQA9P25 ON Semicondu... 1.86 $ 408 MOSFET P-CH 250V 10.5A TO...
FQA9N50 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 500V 9.6A TO-...
FQA9N90C ON Semicondu... -- 1000 MOSFET N-CH 900V 9A TO-3P...
FQA90N08 ON Semicondu... -- 295 MOSFET N-CH 80V 90A TO-3P...
FQA9N90-F109 ON Semicondu... -- 404 MOSFET N-CH 900V 8.6A TO-...
FQA9N90C-F109 ON Semicondu... -- 499 MOSFET N-CH 900V 9A TO-3P...
FQA90N15 ON Semicondu... -- 202 MOSFET N-CH 150V 90A TO-3...
FQA90N15-F109 ON Semicondu... 4.72 $ 241 MOSFET N-CH 150V 90A TO-3...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics