| Allicdata Part #: | FQA9N90-F109-ND |
| Manufacturer Part#: |
FQA9N90-F109 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 900V 8.6A TO-3P |
| More Detail: | N-Channel 900V 8.6A (Tc) 240W (Tc) Through Hole TO... |
| DataSheet: |  FQA9N90-F109 Datasheet/PDF |
| Quantity: | 404 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 240W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 4.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.6A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FQA9N90-F109 is a single N-channel power MOSFET silicon enhancement mode device that operates in the field of power switching and similar applications.
These devices are designed to minimize power losses in systems. They feature low on-resistance and low total gate charge, making them ideal for energy-efficient applications. The FQA9N90-F109 has a maximum drain source voltage of 500 V, and a maximum drain source current of 9 A. The device can operate within a temperature range of -55 °C to +175 °C, allowing for use in a wide variety of environments.
The working principle behind this device is that a small electric field, applied to the gate of a MOSFET, can alter the conductance of the body beneath the gate. When the electric field is high enough, it will change the conductance from an insulating state to an conducting state. This is known as a depletion mode device because the electric field depletes the charge carriers below the gate, and when the electric field is lowered the device returns to its insulating state. The device can be used to control current flows because it can be switched between the on and off state easily.
The FQA9N90-F109 device has a variety of applications, including power switches, DC-DC converters, audio amplifiers and voltage regulators. The device can also be used in various automotive applications such as automotive lighting, door locking systems, air bag systems and vehicle speed control systems. It can also be used in consumer electronics, where it is often used as a part of a switching circuit, such as a power supply or battery charger.
The FQA9N90-F109 is an ideal choice for many applications due to its low on-resistance, low total gate charge and robust construction. It is an ideal choice for applications where power losses must be minimized and cost effectiveness is essential. It is suitable for both high frequency and low frequency switching applications, making it a versatile component for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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