Allicdata Part #: | FQB65N06TM-ND |
Manufacturer Part#: |
FQB65N06TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 65A D2PAK |
More Detail: | N-Channel 60V 65A (Tc) 3.75W (Ta), 150W (Tc) Surfa... |
DataSheet: | FQB65N06TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 32.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB65N06TM is a type of field-effect transistor that belongs to MOSFET family. It is a single VDMOS transistor which utilizes the enhancement mode operation. This device is suitable for applications in multiple industries, and its working principle is based on the same basic principle as other types of field-effect transistors.
FQB65N06TM is designed using the state-of-the-art technology and features a small package size of 3.2mm*2.0mm with a maximum Rds(on) of 0.8 Ω. This device has a very low on-resistance, which makes it ideal for high-efficiency power management applications which require switching high operating current and operating voltage.
Due to its robust structure, FQB65N06TM is suitable for a wide range of applications including power management, white goods, industrial control, office automation and automotive electronics. For example, it can be used for power supply circuits in mobile phones, notebook computers, DVD players, displays and projectors.
In terms of its working principle, FQB65N06TM operates on the same basic principle as other field-effect transistors, with the gate controlling the flow of the current between the source and the drain. When the gate voltage is changed, it causes the electrons in the channel of the transistor to move or change their position, which in turn alters the current flow through the device. This is the basic operation of FQB65N06TM.
The device is rated for a drain voltage of 60 volts, a drain current of 2.6 amperes and a maximum power dissipation of 14 watts. It is also resistant to a variety of environmental conditions such as humidity, temperature, UV radiation and mechanical shocks.
In conclusion, FQB65N06TM is a field-effect transistor that belongs to the MOSFET family and is suitable for multiple applications in various industries. It operates on a basic principle of changing the position of electrons in the transistor\'s channel in order to alter the current flow through the device. This device has a number of features that make it suitable for numerous applications such as power management, white goods, industrial control, office automation and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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