FQB6N80TM Discrete Semiconductor Products

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The FQB6N80TM is a high-performance, field effect transistor (FET), specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The device is a power transistor that has an integrated MOSFET die in a Single IC (Integrated Circuit) package.

The FQB6N80TM is a subthreshold MOSFET which is normally used for switching applications. As with most FETs, the device has a gate, a source and a drain. When a voltage is applied to the gate, the current flows from the source to the drain. The gate acts like a switch; the higher voltage, the greater the current that flows. In this way, the FQB6N80TM can be used to control the amount of power going to a device.

The FQB6N80TM is designed to be used in a wide range of applications; it is an ideal choice for various power conversion applications, such as switching power supplies, LED lighting, robotics, motor control and cooling fans.

The FQB6N80TM can also be used in high-side mosfet switch applications, where it is connected in reverse to the drain of a load and the input is given to the gate terminal of the device. This type of switch is used to control the power to the load and can be used for load control, such as in starter motors. This can be advantageous in applications where the load must be switched off in an emergency situation.

The FQB6N80TM can also be used for low-side mosfet switch applications, where the drain of the device is connected to the load and the input is given to the gate. This type of switch is used for load control and can be used for dimming applications. This type of switch can also be used to protect the load from over-voltage, over-current and short-circuit conditions.

The FQB6N80TM is designed to have a very low on-resistance and a very fast switching time. The device is usually operated either at 5V or 12V and can be used for a variety of applications. The device is capable of operating at very high frequencies and can handle large currents.

By using a FQB6N80TM instead of discrete components, users can reduce overall component count and achieve better thermal performance. Furthermore, the device offers better reliability and can provide superior protection against electrostatic discharge.

The FQB6N80TM is a high-performance, field effect transistor and is suitable for various power conversion applications, as well as high and low-side mosfet switch applications. The device features low on-resistance, fast switching time and superior protection against electrostatic discharge, making it an ideal choice for a wide range of applications.

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