FQB6N60TM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQB6N60TM is an N-channel field effect transistor (FET) with an integrated Schottky diode. This device is designed to offer optimal power saving performance which makes it suitable for applications including high-frequency switching, voltage-level shifting and power supplies. The FQB6N60TM has a maximum drain current of 6A, gate-drain and drain-source breakdown voltages of 500V and 850V respectively, and a maximum junction temperature of 150°C. The operation of this device is based on the principle of capacitive coupling of the gate-source region of the FET.

The FQB6N60TM is constructed of an N-channel silicon substrate with a thin layer of heavily doped n-type Si at the gate region and a thin layer of lightly doped n-type Si at the source region. When a positive voltage is applied to the gate, an electric field is generated which creates a depletion region at the interface between the gate and the substrate. This electric field increases the capacitance of the gate-source junction and creates an inversion layer of carriers (electrons and holes) near the interface. This layer of carriers forms a channel between the source and the drain and allows current to flow.

The FQB6N60TM is designed with the latest advances in manufacturing, packaging and advanced on-chip ESD protection, which makes it suitable for use in a wide range of applications. The most common uses for this device are high-frequency switching, voltage-level shifting, low power applications, and power supplies. This device is also suitable for use in a variety of other applications, including RF power conversion, high-efficiency linear power supplies, automotive and industrial applications, and high-voltage power supplies.

The FQB6N60TM utilizes the principle of capacitive coupling of the gate-source region to reduce switching losses and improve performance. This device also features a very low on-resistance and a low gate-drain capacitance, making it suitable for high-frequency switching applications. Additionally, the FQB6N60TM features high power handling capabilities and low minimum off-state current, making it ideal for voltage-level shifting applications.

The operation of this device is based on a principle of capacitive coupling between the gate-source region and a gate current. When a positive voltage is applied to the gate, an electric field is generated which creates a depletion layer at the interface between the gate and the substrate and an inversion layer of electrons and holes near the interface. The inversion layer provides the channel for current flow between the source and the drain. The capacitive coupling of the gate-source region creates a constant voltage drop across the drain and source, which helps to reduce switching losses and improve performance.

The FQB6N60TM is an ideal solution for a variety of low and high power applications including high-frequency switching, voltage-level shifting and power supplies. Its low gate-drain capacitance, low on-resistance and high power handling capabilities make it suitable for a wide range of applications. Additionally, the integrated Schottky diode offers optimal power saving performance in certain applications. It is a highly reliable device which is designed to withstand the toughest conditions and provide stable performance in the most demanding applications.

The specific data is subject to PDF, and the above content is for reference