Allicdata Part #: | FQB6N90TM_AM002-ND |
Manufacturer Part#: |
FQB6N90TM_AM002 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 5.8A D2PAK |
More Detail: | N-Channel 900V 5.8A (Tc) 3.13W (Ta), 167W (Tc) Sur... |
DataSheet: | FQB6N90TM_AM002 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB6N90TM_AM002, also known as FET (Field-Effect Transistor), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or P-Channel MOSFET, is usually used for power controlling and switching applications. Developed in the early 1970s, FETs are essentially voltage-controlled transistors with no moving parts and no temperaturesensitive components. This makes FETs more reliable and highly-efficient.
The FQB6N90TM_AM002 is an enhancement-mode, low-voltage, NPN, insulated-gate FET designed for high-performance power management applications. It has a low RDS (on) of 9.5 mΩ, a maximum drain-source voltage rating of 60 V, a rise and fall time of 6.4 nS, and a drain-source on-resistance that can be as low as 0.6 Ω. Additionally, the FQB6N90TM_AM002 is suitable for use in many types of circuits, including low and high-power switching and power amplifiers.
The FQB6N90TM_AM002 consists of four terminals: the drain terminal, source terminal, gate terminal, and substrate terminal. The drain terminal is where the voltage is applied, while the source terminal is where the current is discharged. The gate terminal is the input, and the substrate terminal is the connection between the MOSFET and the substrate (or ground). When the gate voltage is increased, the drain current increases, and vice versa. This is because the MOSFET acts as a resistor for the current that is applied to the drain terminal.
The FQB6N90TM_AM002 offers several advantages over other types of MOSFETs. First, its low power consumption makes it suitable for low-power applications. In addition, it has a high frequency response, so it can be used for switching applications that require a fast response. Finally, its small size allows it to be used in a variety of applications, making it ideal for high-density circuits.
FQB6N90TM_AM002 can be used in various applications, including motor control systems, battery-powered applications, and portable devices. In motor control systems, FQB6N90TM_AM002 can be used to efficiently regulate the speed of the motor without creating too much heat. In addition, FQB6N90TM_AM002 can also be used to control the flow of current more accurately. For battery-powered applications, FQB6N90TM_AM002 can be used to accurately control the voltage and current levels. This ensures that the battery is used efficiently and that the battery is not overcharged or discharged.
In conclusion, FQB6N90TM_AM002 is an excellent choice for power control and switching applications. Its low power consumption, high frequency response, and small size make it an ideal solution for a variety of applications. Additionally, its versatile design allows it to be used in low-power and battery-powered applications, as well as in motor control systems. With its wide range of features and applications, FQB6N90TM_AM002 is a great choice for engineers who are looking for a reliable and efficient power switching solution.
The specific data is subject to PDF, and the above content is for reference
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