Allicdata Part #: | FQB6N70TM-ND |
Manufacturer Part#: |
FQB6N70TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 700V 6.2A D2PAK |
More Detail: | N-Channel 700V 6.2A (Tc) 3.13W (Ta), 142W (Tc) Sur... |
DataSheet: | FQB6N70TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 142W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQB6N70TM is a type of transistor in the Field Effect Transistor (FET) family. It is a single high current power MOSFET (metal-oxide-semiconductor field-effect transistor). It is a switching device consisting of three semiconductor layers of N-type and P-type material separated by thin insulator layer. FQB6N70TMs have a high switching speed and low on-state resistance which make them ideal devices for use in power switch applications.
The typical application field of FQB6N70TM includes converters, power supplies, motor drives, controllers, etc. It is well-suited applications in AC and DC circuits, power amplifiers, power supplies and other power electronic systems. Additionally, FQB6N70TM also works well in applications where a drive switch is required for high current and power transfers from one device to another.
In order to understand the working principle of FQB6N70TM, it is important to first look at how it functions as a switch. The FQB6N70TM has an N-channel between two P-type Contact Gates (CGs), which act like a switch. This enables the device to open or close an electrical connection. It is this ability to open and close an electrical connection with ease that makes the FQB6N70TM such a powerful device.
The CGS are normally in an open or off-state allowing virtually no current flow through the device. However, when a voltage is applied to the gate, the N-channel is opened and a positive gate smearing effect takes place. This gate smearing effect helps to reduce the on-state resistance of the device, allowing a larger current flow through the device. This allows the FQB6N70TM to act as a powerful switch capable of transferring large currents.
In addition to its basic function as a switch, the FQB6N70TM can also act as a voltage regulator. In this type of application, the voltage across the device is regulated by adjusting the gate voltage. The device is able to transfer power from a high voltage source to a low voltage output with very little loss of power.
The FQB6N70TM is a versatile and reliable device that is well-suited for a variety of applications. Its high switching speed and low on-state resistance make it an ideal choice for power switch applications, while its ability to regulate voltage makes it a great option for power supplies and other power electronic systems.
The specific data is subject to PDF, and the above content is for reference
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