FQB6N25TM

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The FQB6N25TM is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) intended for use in a switch-mode power supply as a power switch. This device is ideal for applications requiring very low on-resistance and fast switching speeds, such as laptop power supplies, battery chargers, or other power management applications. FQB6N25TM is a single MOSFET, meaning it only consists of one transistor, and is designed to control the flow of current by using the electric field to adjust the channel resistance.

Applications

The FQB6N25TM can be used in a variety of applications, including high-efficiency switch-mode power supplies, and battery chargers. In these applications, the MOSFET is used to control the flow of current in order to regulate the output power. It is also commonly used in motor driver applications, such as motor speed control, as well as in computer power supply and low-voltage applications such as voltage regulators and DC/DC converters.

Working Principle

The FQB6N25TM is designed to offer very low on-resistance, fast switching speeds and robust performance. To achieve these features, the MOSFET uses a three-terminal design that features a metal-oxide semiconductor (MOS) channel and gate. The channel is formed by a thin film of metal oxide, which acts as an insulator between the MOSFET’s source and drain. By using an electric field, the resistance of the channel can be adjusted, allowing current to flow through the MOSFET. The gate terminal controls the voltage across the channel and is used to control the amount of current flowing through the device.

To operate the FQB6N25TM, a gate voltage is applied to the gate terminal. This voltage causes a voltage difference between the source and drain, which in turn creates an electric field across the MOS channel. This electric field is known as the electrostatic or gate-source voltage and can be adjusted to control the flow of current through the channel. The amount of current allowed to pass through the channel is directly proportional to the gate-source voltage, with higher gate voltages allowing more current to flow through the device.

Due to its low on-resistance, the FQB6N25TM offers very low power dissipation, enabling it to be used in high-efficiency applications. Furthermore, the fast switching speeds of the device enable it to be used in applications where fast response times are required.

Conclusion

In summary, the FQB6N25TM is a single MOSFET primarily used in switch-mode power supply, battery charger, motor driver and other power management applications. It is designed to offer very low on-resistance, fast switching speeds and robust performance. Furthermore, its low power dissipation make it ideal for applications that require high efficiency.

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