| Allicdata Part #: | FQB6N40CTMTR-ND |
| Manufacturer Part#: |
FQB6N40CTM |
| Price: | $ 0.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 400V 6A D2PAK |
| More Detail: | N-Channel 400V 6A (Tc) 73W (Tc) Surface Mount D²PA... |
| DataSheet: |  FQB6N40CTM Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.62798 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 73W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FQB6N40CTM Application Field and Working Principle
The FQB6N40CTM device is a N-Channel Enhancement Mode Field Effect Transistor (MOSFET) that is rated at 6-40 volts and up to a maximum drain current of 5 Amperes. It is used as a power switch to control the current flow in certain electronic components. In this article, we will discuss the application field and working principle of FQB6N40CTM.
The FQB6N40CTM is used in several applications such as switching, level shifting, and protection for high voltage and current levels. This type of MOSFET is designed for the handheld devices that require efficient switching. It is also used in electric vehicles, Robotics, and other high-power electrical system designs.
The working principle of the FQB6N40CTM is the use of an enhancement-mode field effect transistor (MOSFET). When the voltage is applied to the gate, it controls the current that flows through the drain. The gate of the MOSFET acts as an insulated layer that makes it possible for the voltage to control the current flow. This type of MOSFET is designed to operate at high voltages and current levels with minimal power loss.
The basic structure of the FQB6N40CTM consists of two MOSFETs placed in series. These two MOSFETs are connected with the gate-source and the drain-source. In order to make the device work properly, the gate of one MOSFET is connected to the source of the other MOSFET. This allows the metal-oxide layer between the gate and the source to regulate the current passing through the device.
The FQB6N40CTM can be used in various applications depending on the voltage and current requirements. It is used in switching devices, power converters, and protection devices. In addition, it can also be used as a level shifter or bridge driver.
The FQB6N40CTM is a reliable and efficient device that is widely used in various applications. The basic principles behind its working can be easily understood and applied in various projects. It is also a cost-effective device compared to other transistors and MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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