FQB70N08TM

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The FQB70N08TM is a single field-effect transistor (FET) that was designed and manufactured by Fairchild Semiconductor. It is a vertical power MOSFET, specifically designed for automotive applications. This type of high-quality FET allows for the efficient delivery of power to a load from the DC supply voltage that is typical of automotive electrical systems.

The FQB70N08TM features a drain current rating of 70 amperes and a drain-source voltage rating of 100 volts; the On-Resistance is rated at 0.64 Ohms. The RDS(on) or On-Resistance, is an important parameter that describes the FET’s ability to conduct current. The lower the RDS(on), the better the FET’s performance in delivering power to the load. In this case, the FQB70N08TM has an RDS(on) of 0.64 Ohm, which is considered to be quite low for a single FET.

The FQB70N08TM can deliver power to the load even under high switching frequency conditions. It features a low gate drive voltage rating of only 6V, which reduces the amount of power dissipation compared to low gate drive voltage FETs without sacrificing performance characteristics. The low gate drive voltage also reduces switching losses, making it more efficient.

The FQB70N08TM also has an integrated Zener diode, which is used to protect the FET from transient overvoltage imposed by voltage spikes and other similar events. It also has a built-in temperature and current protection, which prevents the FET from becoming damaged in the event of an over-temperature or over-current condition. The FQB70N08TM is RoHS (Restriction of Hazardous Substances) compliant, and is made with lead-free, environmentally friendly materials.

The FQB70N08TM can be used in a variety of automotive applications. It is well-suited for automotive lighting and powertrain-related applications, such as solenoid drivers, window lifters, LED drivers, and starter motors. It can also be used as a power switch in DC-DC voltage converters and other similar power conversion applications.

The FQB70N08TM is an N-channel MOSFET, meaning that the device is normally closed and opens when a voltage is applied to its Gate terminal. It operates via the principle of depletion-mode operation, which means that the FET runs on very low current when no voltage is applied to the Gate terminal. When a voltage is applied, current is allowed to flow through the device, enabling it to switch or control the power applied to the load.

The FQB70N08TM is a reliable, high-performance power MOSFET that is ideal for automotive applications. It is robust, efficient, and has an integrated Zener diode and temperature/current protection, making it a great choice for any power-related application. It can handle a wide operating range of temperatures, high switching frequency, and has a low drive voltage, making it a great choice for use in automotive power electronics.

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