FQB7N60TM-WS Discrete Semiconductor Products

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The FQB7N60TM-WS is a standard MOSFET that has been designed to provide high conductance and excellent switching capabilities for many different applications. With its low voltage threshold and lower power dissipation, the FQB7N60TM-WS provides excellent scalability and performance over a wide range of voltages and currents. This article will discuss the FQB7N60TM-WS application field and working principle.

The FQB7N60TM-WS is a single N-channel junction field effect transistor (JFET). It primarily consists of the substrate, source, and drain regions. The source and drain regions are connected to the gate terminal and the gate terminal is insulated by a thin oxide film. The functions of the source and drain regions are to control the flow of current between them. The gate terminal can be used to control the current flow by varying the voltage across the gate.

MOSFETs have many uses, including switching applications, audio amplifiers, and digital logic operations. In switching applications, the FQB7N60TM-WS can be used for power switching circuit in powerelectronic systems, such as power supplies, AC controllers, and motors. In audio amplifiers, the FQB7N60TM-WS can be used to provide amplification for signal and audio frequency applications. In digital logic operations, the FQB7N60TM-WS can be used to create gates and flip-flops.

The FQB7N60TM-WS has an on-state resistance of less than 30W. It also has a breakdown voltage of 600V and a maximum output capacitance of 5.2nF. The maximum switching current rating is 10A, but it can be operated up to 18A with sufficient cooling. It has a maximum power dissipation of 15W and a typical rise and fall times of 6ns and 5ns respectively. The maximum drain source withstand voltages are 37V and 33V respectively.

The FQB7N60TM-WS can be used in its linear or enhancement mode. In linear mode, the channel resistances remain relatively constant and the device acts as a resistor. In enhancement mode, the channel resistance decreases when a positive voltage is applied to the gate terminal and the device acts as a switch. The device can be operated in either mode by appropriately connecting the drain terminal to the gate terminal. Depending on the requirements, the device can be further modified by connecting it to enhancement mode MOSFETs in series or in parallel.

The working principle of the FQB7N60TM-WS is based on the MOSFET principle. The device consists of a gate, source and drain. The source and the drain are connected together via a thin oxide layer which serves as the insulator between them. When a positive voltage is applied to the gate, it forms a region of free electrons in the oxide layer and they travel towards the drain. This region of free electrons provides a low resistance path between the source and the drain, resulting in high switching performance.

In conclusion, the FQB7N60TM-WS is a single N-channel junction field effect transistor that provides high conductance and excellent switching capabilities. This device can be applied in many applications, including switching applications, audio amplifiers, and digital logic operations. The FQB7N60TM-WS has an on-state resistance of less than 30W and can function in either linear or enhancement mode. The device consists of a gate, source and drain and works based on the MOSFET principle.

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