FQB7N80TM_AM002

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1850pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.6A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<div><p>FQB7N80TM_AM002 is a type of n-channel enhancement-mode field-effect transistor (FET). It is constructed with an insulated gate, and is usually used as an electronic switch or amplifier in a variety of industrial, consumer and commercial applications. This type of FET is capable of handling high power and can handle signals up to a frequency of 4800 MHz.</p><p>FETs are made up of four terminals, which are the source, the drain, the gate and the substrate. The gate is an insulated gate that is used to control the flow of current in the device. The substrate is a semiconductor material that is used to provide insulation and stability to the device. The source and drain are the ends of the device, and they allow current to pass through the device.</p><p>The FQB7N80TM_AM002 is typically operated as an enhancement-mode FET. This means that the gate voltage must be higher than the source voltage in order to turn the device on. When the gate voltage is lower than the source voltage, the device will be turned off. The gate voltage is typically applied directly from a power source, and can be controlled by means of a suitable gate driver circuit.</p><p>The FQB7N80TM_AM002 has a very wide range of applications. It is widely used in amplifiers, switches, power supplies, amplifiers, sensors, and many other applications. As an amplifier, the FQB7N80TM_AM002 can provide gain as high as 65 dB and drive signals up to a frequency of 4800 MHz. As a switch, the FQB7N80TM_AM002 can be used to control the flow of current. It can be used to control the current on and off, and can also be used to control the direction of current.</p><p>The FQB7N80TM_AM002 is also commonly used as a power switch to control the flow of power to a variety of electronic components. It is ideal for use in high-temperature applications, and can handle up to 13 amps without overheating. It also has a wide range of operating temperatures and can operate from -55°C to 125°C.</p><p>In addition to its use as an amplifier and switch, the FQB7N80TM_AM002 is also widely used as a temperature sensor and humidity sensor. As a temperature sensor, the FQB7N80TM_AM002 can detect temperatures from -55°C to 125°C. As a humidity sensor, the FQB7N80TM_AM002 can detect relative humidity from 0 to 100%.</p><p>The FQB7N80TM_AM002 is widely used in many applications, and its performance can be improved by adding other components. For example, a common application of the FQB7N80TM_AM002 is to create a self-adapting oscillator circuit. This circuit is used to ensure that the frequency of the circuit remains constant, and it can be used in a variety of applications such as mixed-signal systems, digital and analog signals, and embedded systems.</p><p>The FQB7N80TM_AM002 is a versatile device that is suitable for a wide range of applications. It is highly reliable and can operate over a wide temperature and voltage range. It can be used as an amplifier, switch, and temperature or humidity sensor. It is ideal for high-temperature applications, and it can be used to control the flow of power to various electronic components.</p></div>

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